SMPS MOSFET. IRF3704LPbF Datasheet

IRF3704LPbF MOSFET. Datasheet pdf. Equivalent

Part IRF3704LPbF
Description SMPS MOSFET
Feature SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification .
Manufacture International Rectifier
Datasheet
Download IRF3704LPbF Datasheet



IRF3704LPbF
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
VDSS
20V
PD - 95527
IRF3704PbF
IRF3704SPbF
IRF3704LPbF
HEXFET® Power MOSFET
RDS(on) max
9.0m
ID
77A…
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3704
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
IRF3704S
Max.
20
± 20
77 …
64
308
87
61
0.59
-55 to + 175
TO-262
IRF3704L
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
7/20/04



IRF3704LPbF
IRF3704/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
20
–––
–––
–––
1.0
–––
–––
–––
–––
––– –––
0.021 –––
6.3 9.0
9.8 13.5
––– 3.0
––– 20
––– 100
––– 200
––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 15A ƒ
VGS = 4.5V, ID = 12A ƒ
V VDS = VGS, ID = 250µA
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
42 ––– –––
––– 19 –––
––– 8.1 –––
––– 6.4 –––
––– 16 24
––– 8.4 –––
––– 98 –––
––– 12 –––
––– 5.0 –––
––– 1996 –––
––– 1085 –––
––– 155 –––
Units
S
nC
ns
pF
Conditions
VDS = 10V, ID = 57A
ID = 28.4A
VDS = 10V
VGS = 4.5V ƒ
VGS = 0V, VDS = 10V
VDD = 10V
ID = 28.4A
RG = 1.8
VGS = 4.5V ƒ
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
216
71
Units
mJ
A
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.88
0.82
38
45
41
50
Max. Units
77…
308
A
1.3 V
–––
57 ns
68 nC
62 ns
75 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 35.5A, VGS = 0V ƒ
TJ = 125°C, IS = 35.5A, VGS = 0V ƒ
TJ = 25°C, IF = 35.5A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 35.5A, VR=20V
di/dt = 100A/µs ƒ
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