Power MOSFET. IXTU4N60P Datasheet

IXTU4N60P MOSFET. Datasheet pdf. Equivalent

Part IXTU4N60P
Description PolarHV Power MOSFET
Feature PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA4N60P IXTP4N60P IXTU4N60P IXT.
Manufacture IXYS
Datasheet
Download IXTU4N60P Datasheet



IXTU4N60P
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA4N60P
IXTP4N60P
IXTU4N60P
IXTY4N60P
V=
DSS
ID25 =
RDS(on)
600
4
2.0
V
A
Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
I
D25
IDM
IAR
E
AR
EAS
dv/dt
PD
TJ
TJM
Tstg
T
L
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
=
25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 30 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600 V
600 V
±30 V
±40 V
G
S
TO-220 (IXTP)
4A
10 A
4A
G DS
15 mJ TO-251 (IXTU)
150 mJ
10 V/ns
89
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
3g
G
D
S
TO-252 (IXTY)
G
S
(TAB)
(TAB)
(TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
±100 nA
1 μA
50 μA
2.0 Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2006 IXYS All rights reserved
DS99423E(04/06)



IXTU4N60P
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Q
gs
Qgd
RthJC
RthCS
IXTA4N60P IXTP4N60P
IXTU4N60P IXTY4N60P
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
2.8 4.6
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
635 pF
65 pF
5.7 pF
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 30 Ω (External)
25 ns
10 ns
50 ns
20 ns
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
13.0 nC
6.0 nC
4.0 nC
(TO-220)
1.41°C/W
0.25 °C/W
TO-263 (IXTA) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
4A
ISM Repetitive
12 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 μs, duty cycle d 2 %
1.5 V
trr IF = 4 A
-di/dt = 100 A/μs
500 ns
TO-220 (IXTP) Outline
TO-251 (IXTU) Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
Millimeter
Min. Max.
2.19
0.89
2.38
1.14
0.64
0.76
5.21
0.89
1.14
5.46
0.46
0.46
0.58
0.58
5.97 6.22
6.35
2.28
4.57
6.73
BSC
BSC
17.02 17.78
8.89
1.91
0.89
9.65
2.28
1.27
Inches
Min. Max.
.086 .094
0.35 .045
.025
.030
.205
.035
.045
.215
.018 .023
.018 .023
.235 .245
.250
.090
.180
.265
BSC
BSC
.670 .700
.350
.075
.035
.380
.090
.050
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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