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CEP50N10

CET
Part Number CEP50N10
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. Sup...
Datasheet PDF File CEP50N10 PDF File

CEP50N10
CEP50N10

Overview
CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±25 Drain Current-Continuous Drain Current-Pulsed a ID 50 IDM 200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 136 0.
91 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating an...


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