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CED6861

CET
Part Number CED6861
Manufacturer CET
Description P-Channel MOSFET
Published Oct 1, 2015
Detailed Description CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RD...
Datasheet PDF File CED6861 PDF File

CED6861
CED6861

Overview
CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V.
RDS(ON) = 195mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -60 ±20 -12 -48 31 0.
25 Operating and Store Temperature Range TJ,Tstg ...


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