FMU22S Recovery Diode Datasheet

FMU22S Datasheet, PDF, Equivalent


Part Number

FMU22S

Description

10.0 Ampere Dual Unipolar/Common Cathode Polarity Ultrafast Recovery Diode

Manufacture

Thinki Semiconductor

Total Page 2 Pages
Datasheet
Download FMU22S Datasheet


FMU22S
FMU22S thru FMU24S
®
FMU22S thru FMU24S
Pb Free Plating Product
Pb
10.0 Ampere Dual Unipolar/Common Cathode Polarity Ultrafast Recovery Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverter/Converter)
Plating Power Supply,UPS and Adapter
Car Audio Amplifier and Sound Device System
Mechanical Data
Glass passivated chip junction
Case:TO-220F insulated package type
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: "S" "R" "U" type( As marked )
Mounting position: Any
Weight: 2.2 gram approximately
ELECTRICAL CHARACTERISTICS
Parameter
Type No.
VRM
(V)
Absolute Maximum Ratings
IF (AV) (A)
With
Heatsink
IFSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
VF
(V)
max per IF
element (A)
Electrical Characteristics (Ta=25°C)
IR
(mA)
IR (H)
(mA)
t rr Œ
(ns)
t rr 
(ns)
VR =VRM VR=VRM, Ta=100°C
max per element max per element
IF/IRP
(mA)
IF/IRP
(mA)
Others
Rth ( j-c) Mass
(°C/ W) (g)
Fig.
FMU22S
FMU-22S
200
65
0.98
0.25 1.0 40
30
FMU23S
FMU-23S
300 10.0
–40 to +150
5.0
FMU24S
FMU-24S
400
70
1.30 0.1
0.5
100/100
100/200 4.0
2.1 A
50 35
0.2
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
Fig. A
3.3
10.0
4.2
2.8
C 0.5
Internal Configurations
2.54
1.35
0.85
0.45
+0.2
–0.1
2.54
2.4
Case
Positive CT
Common Cathode
Suffix "S"
Case
Negative CT
Common Anode
Suffix "R"
Case
Doubler
Series Connection
Suffix "U"
ITO-220AB/TO-220F/TO-220FH/TO-220FG/TO-220FB
TO-220 Fully Plastic Insulated Plastic Package Outline
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

FMU22S
FMU22S thru FMU24S
®
RATINGS AND CHARACTERISTIC CURVES (FMU22S thru FMU24S)
FMU22S/FMU22R/FMU22U
Tc —IF(AV) Derating
10
t/T= 1/2
8
t /T= 1/6
D.C.
6
t /T= 1/ 3, Sinewave
4
2
FMU-22S/FMU-22R/FMU-22U
VF—IF Characteristics (Typical)
20
10
1
0.1 Ta = 150ºC
100ºC
60ºC
0.01 25ºC
0
60 80 100 120 140 160
Case Temperature Tc (°C)
FMU23S/FMU23R/FMU23U
Tc —IF(AV) Derating
10
t/T= 1/2
8
6 t /T= 1/6
D.C.
t /T= 1/ 3, Sinewave
4
2
0.001
0.1
0.3 0.5 0.7 0.9 1.1
Forward Voltage VF (V)
1.3
FMU-23S/FMU-23R/FMU-23U
VF—IF Characteristics (Typical)
30
10
1
0.1 Ta = 150ºC
100ºC
60ºC
0.01 25ºC
0
70 90 110 130 150
Case Temperature Tc (°C)
FMU24S/FMU24R/FMU24U
Tc —IF(AV) Derating
10
8
6 t /T= 1/6
t/T= 1/2
D.C.
t /T= 1/ 3, Sinewave
4
2
0.001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Forward Voltage VF (V)
FMU-24S/FMU-24R/FMU-24U
VF—IF Characteristics (Typical)
30
10
1
0.1 Ta = 150ºC
100ºC
60ºC
0.01 25ºC
0
70
90
110 130
150
Case Temperature Tc (°C)
0.001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Forward Voltage VF (V)
IFMS Rating
65
60
50
20ms
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
IFMS Rating
70
60 20ms
50
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
IFMS Rating
70
60 20ms
50
40
30
20
10
0
1 5 10
Overcurrent Cycles
50
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/


Features FMU22S thru FMU24S ® FMU22S thru FMU2 4S Pb Free Plating Product Pb 10.0 Am pere Dual Unipolar/Common Cathode Polar ity Ultrafast Recovery Diode Features Fast switching for high efficiency Low forward voltage drop High current capab ility Low reverse leakage current High surge current capability Application Au tomotive Environment(Inverter/Converter ) Plating Power Supply,UPS and Adapter Car Audio Amplifier and Sound Device Sy stem Mechanical Data Glass passivated chip junction Case:TO-220F insulated pa ckage type Epoxy: UL 94V-0 rate flame r etardant Terminals: Solderable per MIL- STD-202 method 208 Polarity: "S" "R" "U " type( As marked ) Mounting position: Any Weight: 2.2 gram approximately ELE CTRICAL CHARACTERISTICS Parameter Type No. VRM (V) Absolute Maximum Ratings IF (AV) (A) With Heatsink IFSM (A) 5 0Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max per IF e lement (A) Electrical Characteristics (Ta=25°C) IR (mA) IR (H) (mA) t rr Œ (ns) t rr  (ns) VR =VRM.
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