Power MOSFET. LBSS138WT3G Datasheet

LBSS138WT3G MOSFET. Datasheet pdf. Equivalent

Part LBSS138WT3G
Description Power MOSFET
Feature LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications a.
Manufacture Leshan Radio Company
Datasheet
Download LBSS138WT3G Datasheet

LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT3G Datasheet
Recommendation Recommendation Datasheet LBSS138WT3G Datasheet





LBSS138WT3G
LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC-70
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
Miniature SC–70 Surface Mount Package saves board space
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Rθ JA
TL
Value
50
± 20
200
800
150
– 55 to
150
556
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
LBSS138WT1G
S-LBSS138WT1G
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
Drain
3
1
Gate
2 Source
Marking Diagram
J1
J1 = Device Code
M = Month Code
ORDERING INFORMATION
Device
Marking
Shipping
LBSS138WT1G
S-LBSS138WT1G
LBSS138WT3G
S-LBSS138WT3G
J1
J1
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/5



LBSS138WT3G
LESHAN RADIO COMPANY, LTD.
LBSS138WT1G , S-LBSS138WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
50
– Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
µAdc
– – 0.1
– – 0.5
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS – – ±0.1 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
1.5 Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
Ohms
– 5.6 10
– – 3.5
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 –
– mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
– 40 50 pF
– 12 25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
– 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
td(on) – – 20 ns
td(off) – – 20
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .O 2/5





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