Power MOSFET. AUIRFS8408 Datasheet

AUIRFS8408 MOSFET. Datasheet pdf. Equivalent

Part AUIRFS8408
Description Power MOSFET
Feature AUTOMOTIVE GRADE AUIRFS8408 AUIRFSL8408 Features l Advanced Process Technology l New Ultra Low On-.
Manufacture International Rectifier
Datasheet
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AUTOMOTIVE GRADE AUIRFS8408 AUIRFSL8408 Features l Advance AUIRFS8408 Datasheet
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AUIRFS8408
AUTOMOTIVE GRADE
AUIRFS8408
AUIRFSL8408
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l SMPS
G
D
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.3mΩ
1.6mΩ
c317A
195A
DD
S
G
D2Pak
AUIRFS8408
S
D
G
TO-262
AUIRFSL8408
D
Drain
S
Source
Ordering Information
Base part number Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFSL8408
TO-262
Tube
50
AUIRFSL8408
AUIRFS8408
D2Pak
Tube
50
AUIRFS8408
Tape and Reel Left
800
AUIRFS8408TRL
Tape and Reel Right
800
AUIRFS8408TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
™Max.
317
™224
195
l1270
Units
A
PD @TC = 25°C Maximum Power Dissipation
294 W
Linear Derating Factor
1.96
W/°C
VGS Gate-to-Source Voltage
± 20
V
TJ Operating Junction and
-55 to + 175
TST G
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
eEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (tested)
IAR
EAR
ÃeSingle Pulse Avalanche Energy Tested Value
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
kParameter
Junction-to-Case
jJunction-to-Ambient (PCB Mount)
490
800
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
Max.
0.51
40
mJ
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 25, 2013



AUIRFS8408
AUIRFS/SL8408
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on) Turn-On Delay Time
tr Rise Time
td(of f )
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
Coss eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
c(Body Diode)
VSD
dv/dt
Diode Forward Voltage
fPeak Diode Recovery
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Min. Typ.
40 –––
––– 0.032
––– 1.3
2.2 3.0
––– –––
––– –––
––– –––
––– –––
––– 2.1
Max.
–––
–––
1.6
3.9
1.0
150
100
-100
–––
Units
Conditions
dV VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 100A
V VDS = VGS, ID = 250μA
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Ω
Min. Typ. Max. Units
Conditions
211 ––– ––– S VDS = 10V, ID = 100A
––– 216
324
ID = 100A
––– 51
––– 77
g–––
–––
nC
VDS =20V
VGS = 10V
––– 139
–––
ID = 100A, VDS =0V, VGS = 10V
––– 29
–––
VDD = 26V
g––– 202
––– 108
–––
–––
ns
ID = 100A
RG = 2.4Ω
––– 119
–––
VGS = 10V
––– 10820 –––
VGS = 0V
––– 1540
–––
VDS = 25V
––– 1140
–––
pF ƒ = 1.0 MHz, See Fig. 5
––– 1880
––– 2208
–––
–––
hVGS = 0V, VDS =0V to 32V See Fig. 11
iVGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
c––– ––– 317
l––– ––– 1270
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
S
g––– 0.9 1.3 V TJ = 25°C, IS = 100A, VGS = 0V
––– 5.0
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
––– 38
––– 37
–––
–––
ns
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
––– 50
––– 50
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/μs
––– 1.9 ––– A TJ = 25°C
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.099mH, RG = 50Ω,
IAS = 100A, VGS =10V. Part not recommended for use above
this value.
„ ISD 100A, di/dt 1307A/µs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400µs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š Pulse drain current is limited by source bonding technology.
2 www.irf.com © 2013 International Rectifier
April 25, 2013





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