Power MOSFET. IRFL4310PbF Datasheet

IRFL4310PbF MOSFET. Datasheet pdf. Equivalent

Part IRFL4310PbF
Description Power MOSFET
Feature PD - 95144 IRFL4310PbF HEXFET® Power MOSFET l Surface Mount l Dynamic dv/dt Rating l Fast Switching.
Manufacture International Rectifier
Datasheet
Download IRFL4310PbF Datasheet

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET l Surface Mount IRFL4310PbF Datasheet
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IRFL4310PbF
PD - 95144
IRFL4310PbF
HEXFET® Power MOSFET
l Surface Mount
l Dynamic dv/dt Rating
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
D VDSS = 100V
RDS(on) = 0.20
ID = 1.6A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
S O T -2 2 3
Parameter
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V**
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V*
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS Gate-to-Source Voltage
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.2
1.6
1.3
13
2.1
1.0
8.3
± 20
47
1.6
0.10
5.0
-55 to + 150
Parameter
Typ.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
93
48
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
04/22/04



IRFL4310PbF
IRFL4310PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
StaticDrain-to-SourceOn-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
Typ.
–––
0.12
–––
Max.
–––
–––
0.20
Units
V
V/°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 1.6A „
2.0
1.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
17 25
2.1 3.1
7.8 12
7.8 –––
18 –––
34 –––
20 –––
330 –––
92 –––
54 –––
V VDS = VGS, ID = 250µA
S VDS = 50V, ID = 0.80 A
µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
ID = 1.6A
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13 „
VDD = 50V
ns
ID = 1.6A
RG = 6.2
RD = 31 Ω, See Fig. 10 „
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 0.91
showing the
A integral reverse
––– ––– 13
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V „
––– 72 110 ns TJ = 25°C, IF = 1.6A
––– 210 320 nC di/dt = 100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚VDD = 25V, starting TJ = 25°C, L = 9.2 mH
RG = 25, IAS = 3.2A. (See Figure 12)
2
ƒ ISD 1.6A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
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