Power MOSFETs. IRF7842TRPbF Datasheet

IRF7842TRPbF MOSFETs. Datasheet pdf. Equivalent

Part IRF7842TRPbF
Description Power MOSFETs
Feature Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification.
Manufacture International Rectifier
Datasheet
Download IRF7842TRPbF Datasheet

Applications l Synchronous MOSFET for Notebook Processor Pow IRF7842TRPbF Datasheet
Recommendation Recommendation Datasheet IRF7842TRPbF Datasheet





IRF7842TRPbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
IRF7842PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max Qg (typ.)
:40V 5.0m @VGS = 10V 33nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Base Part Number Package Type
IRF7842PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7842PbF
IRF7842TRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
± 20
18
14
140
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 10
1 www.irf.com © 2014 International Rectifier
Typ.
–––
–––
Max.
20
50
Units
°C/W
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July 8, 2014



IRF7842TRPbF
IRF7842PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
81
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.037
4.0
4.7
–––
- 5.6
–––
–––
–––
–––
–––
33
9.6
2.8
10
10.6
12.8
18
1.3
14
12
21
5.0
4500
680
310
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
e5.0 mΩ VGS = 10V, ID = 17A
e5.9 VGS = 4.5V, ID = 14A
2.25 V VDS = VGS, ID = 250μA
––– mV/°C
1.0
150
100
-100
–––
50
μA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 20V, ID = 14A
––– VDS = 20V
––– nC VGS = 4.5V
––– ID = 14A
–––
–––
––– nC VDS = 16V, VGS = 0V
2.6 Ω
e––– VDD = 20V, VGS = 4.5V
––– ID = 14A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 20V
––– ƒ = 1.0MHz
Typ.
–––
–––
Max.
50
14
Units
mJ
A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
99
11
Max.
3.1
140
1.0
150
17
Units
Conditions
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
eV TJ = 25°C, IS = 14A, VGS = 0V
ns TJ = 25°C, IF = 14A, VDD = 20V
enC di/dt = 100A/μs
2 www.irf.com © 2014 International Rectifier
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July 8, 2014





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