MOS FET. RJK1003DPN-E0 Datasheet

RJK1003DPN-E0 FET. Datasheet pdf. Equivalent

Part RJK1003DPN-E0
Description N-Channel MOS FET
Feature RJK1003DPN-E0 N-Channel MOS FET 100 V, 50 A, 11 m Features  High speed switching  Low drive curre.
Manufacture Renesas
Datasheet
Download RJK1003DPN-E0 Datasheet

RJK1003DPN-E0 N-Channel MOS FET 100 V, 50 A, 11 m Features RJK1003DPN-E0 Datasheet
Recommendation Recommendation Datasheet RJK1003DPN-E0 Datasheet





RJK1003DPN-E0
RJK1003DPN-E0
N-Channel MOS FET
100 V, 50 A, 11 m
Features
High speed switching
Low drive current
Low on-resistance RDS(on) = 8.8 mtyp. (at VGS = 10 V)
Package TO-220AB
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
1G
Preliminary Datasheet
R07DS0621EJ0200
Rev.2.00
Aug 24, 2012
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse) Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note2
EAS Note2
Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L = 100 H , Tch = 25C, Rg 50,
3. Tc = 25C
Ratings
100
±20
50
150
50
25
63
125
1.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0621EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6



RJK1003DPN-E0
RJK1003DPN-E0
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
100
2.0
Notes: 4. Pulse test
Typ
8.8
100
4150
660
160
1.6
59
20
12
30
9
60
10
0.85
55
Max
±0.1
1
4.0
11.0
1.5
Unit
V
A
A
V
m
(Ta = 25°C)
Test conditions
ID = 10mA, VGS = 0
VGS = 20 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VGS = 10 V Note4
S ID = 25 A, VD = 10 V Note4
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
nC VDD= 50 V
nC VGS = 10 V,
nC ID = 25 A
ns VGS = 10 V
ns ID = 25 A
ns VDD 30 V
ns Rg = 4.7
V IF = 50 A, VGS = 0 Note4
ns IF = 50 A, VGS = 0
diF/dt = 100 A/s
R07DS0621EJ0200 Rev.2.00
Aug 24, 2012
Page 2 of 6





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