Power MOSFETs. IRFZ46NPbF Datasheet

IRFZ46NPbF MOSFETs. Datasheet pdf. Equivalent

Part IRFZ46NPbF
Description Power MOSFETs
Feature l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Tem.
Manufacture International Rectifier
Datasheet
Download IRFZ46NPbF Datasheet

l Advanced Process Technology l Ultra Low On-Resistance l Dy IRFZ46NPbF Datasheet
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IRFZ46NPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94952A
IRFZ46NPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 16.5m
ID = 53A‡
S
TO-220AB
Max.
53‡
37
180
107
0.71
± 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
°C/W
1
09/30/10



IRFZ46NPbF
IRFZ46NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚
Min. Typ. Max.
55 ––– –––
––– 0.057 –––
––– ––– 16.5
2.0 ––– 4.0
19 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 72
––– ––– 11
––– ––– 26
––– 14 –––
––– 76 –––
––– 52 –––
––– 57 –––
––– 4.5 –––
––– 7.5 –––
––– 1696 –––
––– 407 –––
––– 110 –––
––– 583… 152†
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 28A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A„
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 28A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 28A
RG = 12
VGS = 10V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 28A, L = 389µH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 53
––– ––– 180
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 67 101
––– 208 312
V TJ = 25°C, IS = 28A, VGS = 0V „
ns TJ = 25°C, IF = 28A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ).
‚ Starting TJ = 25°C, L = 389µH
RG = 25, IAS = 28A. (See Figure 12).
ƒ ISD 28A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C.
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
2 www.irf.com





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