Preliminary Data Sheet
NP89N04MUK, NP89N04NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0599EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 3900 pF TYP. (VDS =...
