UniFET MOSFET. FDA20N50_F109 Datasheet

FDA20N50_F109 MOSFET. Datasheet pdf. Equivalent

Part FDA20N50_F109
Description N-Channel UniFET MOSFET
Feature FDA20N50_F109 — N-Channel UniFETTM MOSFET FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 .
Manufacture Fairchild Semiconductor
Datasheet
Download FDA20N50_F109 Datasheet

FDA20N50_F109 — N-Channel UniFETTM MOSFET FDA20N50_F109 N-C FDA20N50_F109 Datasheet
Recommendation Recommendation Datasheet FDA20N50_F109 Datasheet





FDA20N50_F109
FDA20N50_F109
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ
Features
• RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
June 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
G
D
S
TO-3PN
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
FDA20N50_F109
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
500
22
13.2
88
± 30
1110
22
28.0
20
280
2.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FDA20N50_F109 Rev. C2
1
FDA20N50_F109
0.44
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
www.fairchildsemi.com



FDA20N50_F109
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDA20N50
FDA20N50_F109
TO-3PN
Tube
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA, TJ = 25°C
ID = 250μA, Referenced to 25°C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 11A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 11A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250V, ID = 20A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400V, ID = 20A
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 22A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/μs
--
--
--
--
--
Typ
--
0.50
--
--
--
--
--
0.20
24.6
2400
355
27
95
375
100
105
45.6
14.8
21.6
--
--
--
507
7.20
Max Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0 V
0.23 Ω
-- S
3120
465
--
pF
pF
pF
200
760
210
220
59.5
--
--
ns
ns
ns
ns
nC
nC
nC
20 A
80 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 22A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2007 Fairchild Semiconductor Corporation
FDA20N50_F109 Rev. C2
2
www.fairchildsemi.com





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