N-Channel MOSFET. FQB27N25TM_F085 Datasheet

FQB27N25TM_F085 MOSFET. Datasheet pdf. Equivalent

Part FQB27N25TM_F085
Description N-Channel MOSFET
Feature FQB27N25TM_F085/FQI27N25TU_ F085 N-Channel MOSFET FQB27N25TM_F085/FQI27N25TU_F085 N-Channel MOSFET.
Manufacture Fairchild Semiconductor
Datasheet
Download FQB27N25TM_F085 Datasheet

FQB27N25TM_F085/FQI27N25TU_ F085 N-Channel MOSFET FQB27N25T FQB27N25TM_F085 Datasheet
Recommendation Recommendation Datasheet FQB27N25TM_F085 Datasheet





FQB27N25TM_F085
FQB27N25TM_F085/FQI27N25TU_F085
N-Channel MOSFET
250 V, 25.5 A, 131 mΩ
D
May 2014
Features
„ Typ RDS(on) = 108mΩ at VGS = 10V, ID = 25.5A
„ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
GS
TO-263AB
D TO-262AB
G
S
For current package drawing, please refer to the Fairchild 
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
250
±30
25.5
See Figure 4
972
417
3.3
-55 to + 150
0.3
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FQB27N25TM
FQI27N25TU
Device
FQB27N25TM_F085
FQI27N25TU_F085
Package
TO-263AB
TO-262AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
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the solder
maximum
©2014 Fairchild Semiconductor Corporation
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
1
www.fairchildsemi.com



FQB27N25TM_F085
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min.
BVDSS Drain to Source Breakdown Voltage
IDSS Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=250V, TJ = 25oC
VGS = 0V
TJ = 150oC(Note 4)
VGS = ±30V
250
-
-
-
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 25.5A, TJ = 25oC
VGS= 10V TJ = 150oC(Note 4)
3.0
-
-
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 125V
ID = 27A
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
4.1
108
265
1800
350
45
0.82
45
3.3
12
23
Max.
-
1
250
±100
5.0
131
310
-
-
-
-
49
4
-
-
Units
V
μA
uA
nA
V
mΩ
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 125V, ID = 27A,
VGS = 10V, RGEN = 25Ω
--
- 36
- 122
- 81
- 60
--
VSD Source to Drain Diode Voltage
trr Reverse--Recovery Time
Qrr Reverse--Recovery Charge
ISD = 25.5A, VGS = 0V
ISD = 12.75A, VGS = 0V
IF = 27A, dISD/dt = 100A/μs,
VDD=200V
--
--
- 205
- 1.8
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
196
-
-
-
-
164
1.5
1.25
238
2.3
ns
ns
ns
ns
ns
ns
V
V
ns
nC
FQB27N25TM_F085/FQI27N25TU_F085 Rev. C1
2
www.fairchildsemi.com





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