Power MOSFET. FDP5500_F085 Datasheet

FDP5500_F085 MOSFET. Datasheet pdf. Equivalent

FDP5500_F085 Datasheet
Recommendation FDP5500_F085 Datasheet
Part FDP5500_F085
Description N-Channel UltraFET Power MOSFET
Feature FDP5500_F085; FDP5500_F085 N-Channel UltraFET Power MOSFET FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A,.
Manufacture Fairchild Semiconductor
Datasheet
Download FDP5500_F085 Datasheet




Fairchild Semiconductor FDP5500_F085
FDP5500_F085
N-Channel UltraFET Power MOSFET
55V, 80A, 7m
Features
„ Typ rDS(on) = 5.1mat VGS = 10V, ID = 80A
„ Typ Qg(10) = 114nC at VGS = 10V
„ Simulation Models
-Temperature Compensated PSPICE and SABERTM
Models
„ Peak Current vs Pulse Width Curve
„ UIS Rating Curve
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ DC Linear Mode Control
„ Solenoid and Motor Control
„ Switching Regulators
„ Automotive Systems
April 2009
Package
DRAIN
(FLANGE)
TO-220AB
SOURCE
DRAIN
GATE
©2009 Fairchild Semiconductor Corporation
FDP5500_F085 Rev. A
1
Symbol
D
G
S
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Fairchild Semiconductor FDP5500_F085
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VDGR
VGS
ID
Drain to Source Voltage
Drain to Gate Voltage (RGS = 20kΩ)
Gate to Source Voltage
Drain Current Continuous (TC < 135oC, VGS = 10V)
Pulsed
EAS
PD
TJ, TSTG
TL
Tpkg
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
Operating and Storage Temperature
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10sec)
Thermal Characteristics
(Note 1)
(Note 1)
(Note 2)
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220AB, 1in2 copper pad area
Ratings
55
55
±20
80
See Figure 4
860
375
2.5
-55 to + 175
300
260
0.4
62
Units
V
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDP5500
FDP5500_F085
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250µA, VGS = 0V
VDS = 50V, VGS = 0V
VDS = 45V
TC = 150oC
VGS = ±20V
55
-
-
-
- -V
-
-
1
250
µA
- ±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250µA
ID = 80A, VGS= 10V
2 2.8 4
V
- 5.1 7 m
Ciss
Coss
Crss
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 30V
ID = 80A
RL = 0.4
Ig = 1.0mA
- 3565
-
pF
- 1310
-
pF
- 395 - pF
-
207 269
nC
-
114 148
nC
- 6.6 8.6 nC
- 17.2 -
nC
- 52 - nC
FDP5500_F085 Rev. A
2
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Fairchild Semiconductor FDP5500_F085
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Switching Characteristics
Test Conditions
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 30V, ID = 80A,
RL = 0.4, VGS = 10V,
RGS = 2.5
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1:
2:
Starting
Starting
TJ
TJ
=
=
25oC to175oC.
25oC, L = 0.42mH,
IAS
=
64A
ISD = 80A
IF = 80A, dISD/dt = 100A/µs
Min Typ Max Units
- - 75 ns
- 12 - ns
- 34 - ns
- 37 - ns
- 23 - ns
- - 96 ns
-
0.9 1.25
V
- 58 75 ns
- 71 92 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP5500_F085 Rev. A
3
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