DatasheetsPDF.com
TH58BYG3S0HBAI4
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
Description
TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static regist...
Toshiba
Download TH58BYG3S0HBAI4 Datasheet
Similar Datasheet
TH58BYG3S0HBAI4
8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
- Toshiba
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)