RECOVERY DIODE. YG339N6 Datasheet

YG339N6 Datasheet PDF, Equivalent


Part Number

YG339N6

Description

FAST RECOVERY DIODE

Manufacture

Fuji Semiconductors

Total Page 3 Pages
PDF Download
Download YG339N6 Datasheet PDF


YG339N6 Datasheet
YG339C6,N6,D6 (5A)
FAST RECOVERY DIODE
(600V / 5A)
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection diagram
YG339C6
1
2
YG339N6
1
2
YG339D6
1
2
3
3
3
Item
Repetitive peak reverse voltage
Symbol
VRRM
Conditions
Rating
600
Unit
V
Non-repetitive peak reverse voltage VRSM
600 V
Isolating voltage
Viso Terminals-to-Case, AC.1min
1500
V
Average output current
Surge current
IO Square wave, duty=1/2, Tc=110°C
IFSM Sine wave 10ms
5*
20
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
*Average forward current of centertap full wave connection
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
Reverse current
**
Reverse recovery time
Thermal resistance
Mechanical characteristics
VFM
IRRM
trr
Rth(j-c)
IFM=2.0A
VR=VRRM
IF=0.1A, IR=0.1A, Irec=0.01A
Junction to case
** Rating per element
2.5
100
0.05
3.5
V
µA
µs
°C/W
Mounting torque
Approximate weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG339N6 Datasheet
(600V / 5A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
1 Tj=125°C
Tj=100°C
Tj=25°C
0.1
0.01
0
1234
VF Forward Voltage (V)
5
YG339C6,N6,D6 (5A)
Reverse Characteristic (typ.)
103
102
Tj=150°C
Tj=125°C
101 Tj=100°C
Tj=25°C
100
10-1
10-2
0
100 200 300 400 500 600 700 800
VR Reverse Voltage (V)
Forward Power Dissipation
14
12 11112222Io3333444455556666777788889999000011112222333344445555666677778888
λ
10 360o
8 Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
6 Square wave λ=180°
DC
4
2
Per 1element
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Io Average Forward Current (A)
Junction Capacitance Characteristic (typ.)
100
160
150
140
130
120
110
100
90
80
70
60
50
0
Current Derating (Io-Tc)
DC
Square wave λ=180°C
Sine wave λ=180°C
Square wave λ=120°C
Square wave λ=60°C
12345678
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability
100
10 10
1
10
100
VR Reverse Voltage (V)
1
1 10
Number of Cycles at 50Hz


Features Datasheet pdf YG339C6,N6,D6 (5A) FAST RECOVERY DIODE (600V / 5A) Outline drawings, mm 10± 0.5 +0.2 ø3.2 -0.1 4.5±0.2 2.7±0.2 2.7±0.2 15±0.3 6.3 1.2±0.2 13Min 3.7±0.2 Features Insulated package by fully molding High voltage by mesa d esign High reliability Applications Hig h speed switching Maximum ratings and c haracteristics Absolute maximum ratings 0.7±0.2 2.54±0.2 +0.2 0.6 -0 2.7± 0.2 JEDEC EIAJ SC-67 Connection diag ram YG339C6 1 2 YG339N6 1 2 YG33 9D6 1 2 3 3 3 Item Repetitive peak reverse voltage Symbol VRRM Condition s Rating 600 Unit V Non-repetitive p eak reverse voltage VRSM 600 V Isolat ing voltage Viso Terminals-to-Case, AC .1min 1500 V Average output current Surge current IO Square wave, duty=1/2 , Tc=110°C IFSM Sine wave 10ms 5* 20 A A Operating junction temperature T j +150 °C Storage temperature Tstg Electrical characteristics (Ta=25°C Unless otherwise specified ) -40 to +1 50 °C *Average forward current of centertap full wave connection Item Sym.
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