TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 450 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain-gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (t = 1 ms)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalanche energy (Note 3)
Storage temperature range
-55 to 150
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.