Schottky Rectifier. VS-30CTQ040PbF Datasheet

VS-30CTQ040PbF Rectifier. Datasheet pdf. Equivalent

Part VS-30CTQ040PbF
Description Schottky Rectifier
Feature VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectif.
Manufacture Vishay
Datasheet
Download VS-30CTQ040PbF Datasheet

VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series www.vishay.com VS-30CTQ040PbF Datasheet
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VS-30CTQ040PbF
VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 15 A
35 V, 40 V, 45 V
0.56 V
15 mA at 125 °C
175 °C
Common cathode
20 mJ
FEATURES
• 175 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM tp = 5 μs sine
VF 15 Apk, TJ = 125 °C (per leg)
TJ
VALUES
30
35 to 45
1060
0.56
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
30CTQ035PbF
VS-
30CTQ035-N3
VS-
30CTQ040PbF
VS-
30CTQ040-N3
VS-
30CTQ045PbF
VS-
30CTQ045-N3
UNITS
Maximum DC
reverse voltage
VR
Maximum working
35 35 40 40 45 45 V
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 127 °C, rectangular waveform
30
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1060
265
20
3.0
UNITS
A
mJ
A
Revision: 26-Aug-11
1 Document Number: 94187
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-30CTQ040PbF
VS-30CTQ0..PbF Series, VS-30CTQ0..-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
CT
LS
dV/dt
TEST CONDITIONS
15 A
30 A
TJ = 25 °C
15 A
30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.62
0.76
0.56
0.70
2
15
900
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthJC
DC operation
See fig. 4
DC operation
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AB
VALUES UNITS
- 55 to 175
°C
3.25
1.63 °C/W
0.50
2.0 g
0.07 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
30CTQ035
30CTQ040
30CTQ045
Revision: 26-Aug-11
2 Document Number: 94187
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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