N-Channel MOSFET. AOL1712 Datasheet

AOL1712 MOSFET. Datasheet pdf. Equivalent

Part AOL1712
Description N-Channel MOSFET
Feature AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOL1712 Datasheet

AOL1712 N-Channel Enhancement Mode Field Effect Transistor S AOL1712 Datasheet
Recommendation Recommendation Datasheet AOL1712 Datasheet




AOL1712
AOL1712
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AOL1712 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =65A
RDS(ON) < 4.2m
RDS(ON) < 5.5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
S
G
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain
TC=25°C
Current B, H
TC=100°C
Pulsed Drain Current C
Continuous Drain TA=25°C
Current A
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
ID
IDM
IDSM
IAR
EAR
PD
PDSM
Junction and Storage Temperature Range TJ, TSTG
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±12
65
65
80
16
12
38
217
100
50
2.1
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOL1712
AOL1712
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Diode Continuous Current H
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
Min
30
1.4
80
Typ Max Units
V
0.1
mA
20
±100 nA
1.8 2.5
V
A
3.5 4.2
5.5 6.6 m
4.4 5.5
90 S
0.36 0.5
V
65 A
3940
590
255
0.72
5120
1.1
pF
pF
pF
73 95
35
10.4
12.4
9.8
8.4
45
10
36 43
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A=25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: July. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)