NAND Gate. L74VHC1G00 Datasheet

L74VHC1G00 Gate. Datasheet pdf. Equivalent


Part L74VHC1G00
Description 2-Input NAND Gate
Feature LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate L74VHC1G00 The L74VHC1G00 is an advanced high speed .
Manufacture LRC
Datasheet
Download L74VHC1G00 Datasheet

LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate L74VHC1G00 T L74VHC1G00 Datasheet
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L74VHC1G00
LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate
L74VHC1G00
The L74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is
composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The L74VHC1G00 input
structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1G00 to be
used to interface 5 V circuits to 3 V
circuits.
• High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
5
4
1
2
3
SC–70/SC–88A/SOT–353
DF SUFFIX
5
4
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
MARKING DIAGRAMS
V1d
Pin 1
d = Date Code
V1d
Pin 1
d = Date Code
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
PIN ASSIGNMENT
1 IN B
2 IN A
3 GND
4 OUT Y
5 VCC
FUNCTION TABLE
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
1/6



L74VHC1G00
LESHAN RADIO COMPANY, LTD.
L74VHC1G00
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CC
V IN
V OUT
I IK
I OK
I OUT
I CC
T STG
TL
TJ
θ JA
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
SC–70/SC–88A (Note 1)
– 0.5 to + 7.0
– 0.5 to V CC + 0.5
– 0.5 to V CC + 0.5
± 20
± 20
± 12.5
± 25
– 65 to + 150
260
+ 150
150
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
TSOP–5
200
P D Power Dissipation in Still Air at 85C
SC–70/SC–88A
TSOP–5
150
230
mW
MSL
Moisture Sensitivity
Level 1
FR
V ESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 30% – 35%
Human Body Model (Note 2)
Machine Model (Note 3)
UL 94 V–0 (0.125 in)
>2000
> 200
V
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 85C (Note 5)
± 500
mA
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC DC Supply Voltage
V IN DC Input Voltage
V OUT
DC Output Voltage
T A Operating Temperature Range
t r ,t f
Input Rise and Fall Time
V CC = 3.3 ± 0.3 V
V CC = 5.0 ± 0.5 V
Min Max Unit
2.0 5.5 V
0.0 5.5 V
0.0 V CC V
– 55
+ 125
°C
0 100 ns/V
0 20
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Time,
Temperature °C
Hours
Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1 10 100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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