Voltage IGBT. IXGH40N120A2 Datasheet

IXGH40N120A2 IGBT. Datasheet pdf. Equivalent

Part IXGH40N120A2
Description High Voltage IGBT
Feature High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IX.
Manufacture IXYS
Datasheet
Download IXGH40N120A2 Datasheet

High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH IXGH40N120A2 Datasheet
Recommendation Recommendation Datasheet IXGH40N120A2 Datasheet




IXGH40N120A2
High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2
IXGT 40N120A2
IXGH 40N120A2
IXGT 40N120A2
V = 1200
I CES = 75
V C25
CE(sat)
2.0
V
A
V
Symbol Test Conditions
Maximum Ratings
VCES
VCES
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TTJsMtg
TL
TSOLD
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C, IGBT chip capability
TC = 110°C
TJ 150°C, tp < 300 μs
VGE = 15 V, TVJ = 150°C, RG = 5 Ω
Clamped inductive load, VCE < 960 V
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
Mounting torque (ixgh)
(IXGH)
(IXGT)
1200
1200
± 20
± 30
75
40
160
ICM = 80
V
V
V
V
A
A
A
A
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
260 °C
1.3/10 Nm/lb.in.
6.0 g
4.0 g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VGE(th)
VGE(th)
IC = 1 mA, VGE = 0 V
IC = 250 μA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC110, VGE = 15V
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
TJ = 125°C
50 μA
1mA
± 100 nA
2.0 V
TO-247 (IXFH)
G
CE
(TAB)
TO-268 (IXGT)
G = Gate
E = Emitter
G
E
C = Collector
TAb = Collector
C (TAB)
Features
International standard packages
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
© 2005 IXYS All rights reserved
DS99509 (12/05)



IXGH40N120A2
IXGH 40N120A2
IXGT 40N120A2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = IC110, VCE = 10 V
IC(ON)
VGE = 10 V, VCE = 10 V
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = 2 Ω
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = 2 Ω
Eoff
RthJC
RthCS
(TO-247)
Note 1: Pulse test, t 300 μs, duty cycle 2 %
Characteristic Values
Min. Typ. Max.
28 40
S
195 A
3150
165
70
pF
pF
pF
136 nC
19 nC
54 nC
22
41
420 800
800 1200
15 25
ns
ns
ns
ns
mJ
19
36
3.5
730
1570
ns
ns
mJ
ns
ns
35 mJ
0.35 K/W
0.25 K/W
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline (IXGT)
PRELIMINARY TECHNICAL
INFORMATION
The product presented herein is under
development. The Technical Specifications
offered are derived from data gathered
during objective characterizations of
preliminary engineering lots; but also may
yet contain some information supplied during
a subjective pre-production design evalua-
tion. IXYS reserves the right to change
limits, test conditions, and dimensions
without notice.
TO-268: Min. Recommended Footprint
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463





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