IGBT. IXGA15N120B2 Datasheet

IXGA15N120B2 IGBT. Datasheet pdf. Equivalent

Part IXGA15N120B2
Description IGBT
Feature HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KH.
Manufacture IXYS
Datasheet
Download IXGA15N120B2 Datasheet

HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 1 IXGA15N120B2 Datasheet
Recommendation Recommendation Datasheet IXGA15N120B2 Datasheet




IXGA15N120B2
HiPerFASTTM IGBT IXGA 15N120B2
IXGP 15N120B2
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
VCES
IC25
VCE(sat)
tfi(typ)
=1200 V
= 30 A
= 3.5 V
= 137 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
T
C
= 25°C, 1 ms
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
10
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque with screw M3
Mounting torque with screw M3.5
TO-220
TO-263
Maximum Ratings
1200
1200
±20
±30
30
15
60
I = 40
CM
@ 0.8 V
CES
170
-55 ... +150
150
-55 ... +150
V TO-220AB (IXGP)
V
V
V
GCE
A
A
A TO-263 AA (IXGA)
A
G
WE
°C
°C
°C
C (TAB)
300 °C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4g
2g
Features
International standard packages
JEDEC TO-220AB and TO-263AA
Low switching losses
MOS Gate turn-on
- drive simplicity
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV
CES
VGE(th)
I
C
=
250
µA,
V
GE
=
0
V
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
V =0V
GE
I
GES
V
CE
=
0
V,
V
GE
=
±20
V
VCE(sat)
IC = ICE90, VGE = 15
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
TJ = 25°C
T
J
=
125°C
100 µA
3.5 mA
±100 nA
TJ = 125°C
3.5 V
2.7 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
© 2005 IXYS All rights reserved
DS99417(05/05)



IXGA15N120B2
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
C
ies
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
R
thCK
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 10
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 10
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
TO-220
Characteristic Values
Min. Typ. Max.
12 15
S
1700
95
38
pF
pF
pF
86 nC
13 nC
26 nC
25
15
165 240
137 255
1.4 2.3
ns
ns
ns
ns
mJ
25
18
0.60
260
305
2.8
ns
ns
mJ
ns
ns
mJ
0.75 K/W
0.5 K/W
IXGA 15N120C
IXGP 15N120C
TO-220 AB Dimensions
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344





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