600V IGBT. IXGN320N60A3 Datasheet

IXGN320N60A3 IGBT. Datasheet pdf. Equivalent

Part IXGN320N60A3
Description 600V IGBT
Feature GenX3TM 600V IGBT IXGN320N60A3 Ultra-Low-Vsat PT IGBT for up to 5kHz Switching Symbol VCES VCGR V.
Manufacture IXYS
Datasheet
Download IXGN320N60A3 Datasheet

GenX3TM 600V IGBT IXGN320N60A3 Ultra-Low-Vsat PT IGBT for IXGN320N60A3 Datasheet
Recommendation Recommendation Datasheet IXGN320N60A3 Datasheet




IXGN320N60A3
GenX3TM 600V IGBT
IXGN320N60A3
Ultra-Low-Vsat PT IGBT for
up to 5kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ILRMS
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGE = 1M
Continuous
Transient
TC = 25C (Chip Capability)
TTeC rm= i1n1a0l CCurrent Limit
TC = 25C, 1ms
VGE= 15V, TVJ = 125C, RG = 1
Clamped Inductive Load
TC = 25C
50/60Hz
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
E
Maximum Ratings
600 V
600 V
±20 V
±30 V
320
170
200
1200
A
A
A
A
ICM = 320
@0.8 • VCES
735
A
W
-55 ... +150
150
-55 ... +150
C
C
C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES VCE = 0V, VGE = ±20V
TJ = 125C
VCE(sat)
IC = 100A, VGE = 15V, Note 1
IC = 320A
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
150 μA
1.5 mA
±400 nA
1.05 1.30 V
1.46 V
VCES =
IC110 =
VCE(sat)
600V
170A
1.30V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
Either Emitter Terminal Can Be Used
as Main or Kelvin Emitter
Features
Optimized for Low Conduction Losses
High Avalanche Capability
Isolation Voltage 3000 V~
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
© 2015 IXYS CORPORATION, All Rights Reserved
DS99576E(01/15)



IXGN320N60A3
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 80V, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
Resistive Load, TJ = 25C
IC = 80A, VGE = 15V
VCE = 400V, RG = 1
td(on)
tr
td(off)
tf
Resistive Load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 400V, RG = 1
RthJC
RthCK
Characteristic Values
Min. Typ. Max.
70 125
S
18 nF
985 pF
150 pF
560 nC
94 nC
195 nC
63 ns
68 ns
290 ns
740 ns
62
77
330
1540
ns
ns
ns
ns
0.17 C/W
0.05 C/W
IXGN320N60A3
SOT-227B miniBLOC (IXGN)
M4 screws (4x) supplied
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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