Voltage IGBTs. IXGT40N120B2D1 Datasheet

IXGT40N120B2D1 IGBTs. Datasheet pdf. Equivalent

Part IXGT40N120B2D1
Description High Voltage IGBTs
Feature High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE(sat) ≤ 3.5V .
Manufacture IXYS
Datasheet
Download IXGT40N120B2D1 Datasheet

High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 V IXGT40N120B2D1 Datasheet
Recommendation Recommendation Datasheet IXGT40N120B2D1 Datasheet




IXGT40N120B2D1
High Voltage IGBTs
w/Diode
IXGH40N120B2D1
IXGT40N120B2D1
VCES = 1200V
IC110 = 40A
VCE(sat) 3.5V
tfi(typ) = 140ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (Limited
110°C
by
Lead)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
1200
± 20
± 30
75
40
25
200
V
V
V
V
A
A
A
A
ICM = 80
@ 0.8 VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 40A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
100 μA
3 mA
±100 nA
2.9 3.5 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
z International Standard Packages
z IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
z Square RBSOA
z Fast Recovery Expitaxial Diode
(FRED)
- Soft Recovery with Low IRM
Advantages
z High Power Density
z Low Gate Drive Requirement
© 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)



IXGT40N120B2D1
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfS IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25V, VGE = 0V, f = 1MHz
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 960V, RG = 2Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 960V, RG = 2Ω
Note 2
Characteristic Values
Min. Typ. Max.
23 37
S
3360
190
63
138
20
48
pF
pF
pF
nC
nC
nC
21 ns
55 ns
4.5 mJ
290 ns
140 270 ns
3.0 6.0 mJ
21 ns
58 ns
6.5 mJ
350 ns
420 ns
8.3 mJ
0.33 °C/W
0.21 °C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 30A, VGE = 0V
IRM
trr
RthJC
IFV=R
30A, -di/dt = 100A/μs,
= 300V,VGE = 0V
Characteristic Values
Min. Typ. Max.
TJ = 150°C
TJ = 100°C
TJ = 100°C
2.8 V
1.6 V
4A
100 ns
0.9 °C/W
IXGH40N120B2D1
IXGT40N120B2D1
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Note 1: Pulse Test, t 300μs, Duty Cycle, d 2%.
2. Switching Times may Increase for VCE (Clamp) > 0.8 • VCES,
Higher TJ or Increased RG.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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