IGBT. IXGH50N60C2 Datasheet

IXGH50N60C2 IGBT. Datasheet pdf. Equivalent


Part IXGH50N60C2
Description IGBT
Feature HiPerFASTTM High Speed IGBT C2-Class IXGH50N60C2 IXGT50N60C2 VCES = 600V IC110 = 50A VCE(sat)  .
Manufacture IXYS
Datasheet
Download IXGH50N60C2 Datasheet

HiPerFASTTM High Speed IGBT C2-Class IXGH50N60C2 IXGT50N60C IXGH50N60C2 Datasheet
Recommendation Recommendation Datasheet IXGH50N60C2 Datasheet




IXGH50N60C2
HiPerFASTTM
High Speed IGBT
C2-Class
IXGH50N60C2
IXGT50N60C2
VCES = 600V
IC110 = 50A
VCE(sat)  2.7V
tfi(typ) = 48ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C (Limited by Leads)
= 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-268
TO-247
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
300 A
ICM = 80
@VCE VCES
400
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
50 A
1 mA
100 nA
2.7 V
1.8 V
TO-268 (IXGT)
G
E
C (Tab)
TO-247 (IXGH)
GCE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Very High Frequency IGBT
Square RBSOA
High Current Handling Capability
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
PFC Circuits
AC Motor Drives
DC Servo & Robot Drives
DC Choppers
© 2014 IXYS CORPORATION, All Rights Reserved
DS99147A(02/14)



IXGH50N60C2
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 40A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Q
gc
IC = 40A, VGE = 15V, VCE = 0.5 • VCES
t
d(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 0.8 • VCES, RG = 2
Note 2
td(on)
t
ri
Eon
td(off)
tfi
E
off
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 0.8 • VCES, RG = 2
Note 2
R
thJC
RthCS
TO-247
Characteristic Values
Min.
Typ. Max.
40 51
S
3700
230
50
pF
pF
pF
138 nC
25 nC
40 nC
18 ns
25 ns
115 150 ns
48 ns
0.38 0.70 mJ
18 ns
25 ns
1.4 mJ
170 ns
60 ns
0.74 mJ
0.31 °C/W
0.21 °C/W
IXGH50N60C2
IXGT50N60C2
TO-268 Outline
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
TO-247 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
123
P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)