Inverter Module. MUBW30-12E6K Datasheet

MUBW30-12E6K Module. Datasheet pdf. Equivalent

Part MUBW30-12E6K
Description Converter - Brake - Inverter Module
Feature Converter - Brake - Inverter Module (CBI 1) SPT IGBT Part name (Marking on product) MUBW30-12E6K MU.
Manufacture IXYS
Datasheet
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MUBW30-12E6K
Converter - Brake - Inverter
Module (CBI 1)
SPT IGBT
Part name (Marking on product)
MUBW30-12E6K
MUBW30-12E6K
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IDAVM25 = 130 A IC25 = 19 A IC25 = 29 A
IFSM = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V
E72873
Pin configuration see outlines.
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with SPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
Package:
• UL registered
• Industry standard E1-pack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-9



MUBW30-12E6K
MUBW30-12E6K
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
ICM
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
tSC
(SCSOA)
RthJC
RthCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Definitions
max. repetitve reverse voltage
forward current
forward voltage
IRM
trr
Erec(off)
RthJC
RthCH
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C to 150°C
IC = 30 A; VGE = 15 V
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 20 A
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
inductive load
VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 68 W
TVJ = 125°C
RBSOA; VGE = ±15 V; RG = 68 W
L = 100 µH; clamped induct. load TVJ = 125°C
VCEmax = VCES - LS·di/dt
VCE = 900 V; VGE = ±15 V;
RG = 68 W; non-repetitive
TVJ = 125°C
(per IGBT)
(per IGBT)
min.
4.5
Ratings
typ. max.
1200
±20
±30
30
21
130
3.1 3.6
3.8
6.5
1
0.6
200
1180
100
210
110
320
180
4.1
1.5
45
10
0.95
0.35
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
µs
K/W
K/W
Conditions
IF = 30 A; VGE = 0 V
VR = 600 V
diF /dt = -500 A/µs
IF = 30 A; VGE = 0 V
(per diode)
(per diode)
TVJ = 150°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
49
32
2.9
2.0
27
150
tbd
0.9
0.3
Unit
V
A
A
V
V
A
ns
µJ
K/W
K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-9





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