Voltage IGBT. IXGT6N170 Datasheet

IXGT6N170 IGBT. Datasheet pdf. Equivalent

Part IXGT6N170
Description High Voltage IGBT
Feature High Voltage IGBT IXGT6N170 IXGH6N170 VCES = IC90 = VCE(sat) tfi(typ)  = 1700V 6A 4.0V 290n.
Manufacture IXYS
Datasheet
Download IXGT6N170 Datasheet

High Voltage IGBT IXGT6N170 IXGH6N170 VCES = IC90 = VCE( IXGT6N170 Datasheet
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IXGT6N170
High Voltage
IGBT
IXGT6N170
IXGH6N170
VCES =
IC90 =
VCE(sat)
tfi(typ)

=
1700V
6A
4.0V
290ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 33
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
1700
V
1700
V
± 20
± 30
V
V
12 A
6A
24 A
ICM = 12
@ 0.8 • VCES
75
- 55 ... +150
150
- 55 ... +150
300
260
1.13/10
A
W
C
C
C
°C
°C
Nm/lb.in.
4g
6g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.0 V
10 μA
100 μA
±100 nA
3.0 4.0 V
4.0
TO-268 (IXGT)
G
E
C (Tab)
TO-247 (IXGH)
G
CE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
International Standard Packages
High VoltagePackage
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Capacitor Discharge & Pulse Circuits
Uninterruptible Power Supplies (UPS)
Motor Drives
DC Servo & Robot Drives
DC Choppers
Switched-Mode & Resonant-Mode
Power Supplies
© 2015 IXYS CORPORATION, All Rights Reserved
DS98989C(9/15)



IXGT6N170
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 6A, VCE = 10V, Note 1
IC(ON)
VGE = 15V, VCE = 10V
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 6A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 6A, VGE = 15V
VCE = 0.8 VCES, RG = 33
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Inductive load, TJ = 125°C
IC = 6A, VGE = 15V
VCE = 0.8 VCES, RG = 33
Note 2
TO-247
Characteristic Values
Min.
Typ. Max.
3.0 4.5
S
28 A
330 pF
23 pF
6 pF
20.0 nC
3.6 nC
8.0 nC
40 ns
36 ns
250 500 ns
290 500 ns
1.5 2.5 mJ
45 ns
40 ns
0.5 mJ
300 ns
300 ns
2.0 mJ
1.65 °C/W
0.21 °C/W
IXGH6N170
IXGT6N170
TO-268 Outline
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
TO-247 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
123
P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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