Voltage IGBT. IXGH24N170AH1 Datasheet

IXGH24N170AH1 IGBT. Datasheet pdf. Equivalent


Part IXGH24N170AH1
Description High Voltage IGBT
Feature High Voltage IGBTs w/Diode Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 VCES = I.
Manufacture IXYS
Datasheet
Download IXGH24N170AH1 Datasheet

High Voltage IGBTs w/Diode Preliminary Technical Informatio IXGH24N170AH1 Datasheet
Recommendation Recommendation Datasheet IXGH24N170AH1 Datasheet




IXGH24N170AH1
High Voltage
IGBTs w/Diode
Preliminary Technical Information
IXGH24N170AH1
IXGT24N170AH1
VCES =
IC25 =
VCE(sat)
tfi(typ) =
1700V
24A
6.0V
40ns
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IICC2950
ICM
SSOA
(RBSOA)
tSC
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1700
1700
± 20
± 30
V
V
V
V
TTCC
= 25°C
= 90°C
TC = 25°C, 1ms
24
16
75
VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω
0.I8CM
= 50
VCES
TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω
10
TC = 25°C
250
-55 ... +150
150
-55 ... +150
A
A
A
A
V
μs
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300 °C
260 °C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
TO-247
TO-268
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 16A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
1700
3.0 5.0
V
V
TJ = 125°C
100 μA
1.5 mA
±100 nA
4.5 6.0 V
TJ = 125°C
4.8
V
G
CE
C (TAB)
TO-268 (IXGT)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS99413A(05/09)



IXGH24N170AH1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 16A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 0.5 VCES, RG = 10Ω
Note 1
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
VCE = 0.5 VCES, RG = 10Ω
Note 1
RthJC
RthCK
(TO-247)
Characteristic Values
Min.
Typ.
Max.
13 22
S
2860
198
58
pF
pF
pF
140 nC
18 nC
60 nC
21 ns
36 ns
2.97 mJ
336 ns
40 80 ns
0.79 1.50 mJ
23 ns
31 ns
3.60 mJ
360 ns
96 ns
1.47 mJ
0.50 °C/W
0.21 °C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V
IRM
trr
tIRrrM
RthJC
IF = 20A, -diF/dt = 150A/μs,
VR = 1200V, VGE = 0V
TJ = 125°C
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2.5 2.95 V
2.5 V
15 A
80 ns
20 A
200 ns
0.9 °C/W
IXGH24N170AH1
IXGT24N170AH1
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Notes:
1.
Switching times may increase
higher TJ or increased RG.
for
VCE
(Clamp)
>
0.5
VCES,
2. Pulse Test, t 300μs; Duty Cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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