High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G IXBH 5N160 G
IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns
Preliminary data sheet
C TO-220 AB (IXBP)
G
C E
C (TAB)
G
TO-247 AD (IXBH)
E G C C (TAB) E
A = Anode, C = Cathode , TAB = Cathode
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES...
