IGBT Module. MWI60-06G6K Datasheet

MWI60-06G6K Module. Datasheet pdf. Equivalent


Part MWI60-06G6K
Description IGBT Module
Feature Advanced Technical Information MWI 60-06 G6K IGBT Module Sixpack Square RBSOA 10, 23 14 8 13 NTC .
Manufacture IXYS
Datasheet
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MWI60-06G6K
Advanced Technical Information
MWI 60-06 G6K
IGBT Module
Sixpack
Square RBSOA
10, 23
14
8
13
NTC
76
5
9, 24
18 22
17 21
42
31
IC25 = 60 A
VCES
= 600 V
VCE(sat) typ. = 2.3 V
11, 12
15, 16
19, 20
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
RthCH
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 10 ; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
600 V
± 20 V
60 A
41 A
80
VCES
180
A
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.25 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 400 V; IC = 30 A
VGE = ±15 V; RG = 3
2.3 2.8 V
2.0 V
3 5V
0.2 mA
1.2 mA
100 nA
20 ns
20 ns
130 ns
80 ns
0.6 mJ
0.5 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 30 A
(per IGBT)
2500
95
0.25
pF
nC
0.7 K/W
K/W
Features
• IGBTs
- low saturation voltage
- fast switching
- short tail current for optimized
performance also in resonant
circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
• UL registered E72873
Typical Applications
• AC drives
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2



MWI60-06G6K
Advanced Technical Information
MWI 60-06 G6K
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
48 A
33 A
Equivalent Circuits for Simulation
Conduction
Symbol
Conditions
VF
IRM
trr
RthJC
RthCH
IF = 30 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -400 A/µs; TVJ = 100°C
VR = 300 V; VGE = 0 V
(per Diode)
Temperature Sensor NTC
Characteristic Values
min. typ. max.
2.2 2.6 V
1.7 V
5A
65 ns
0.9 K/W
0.3 K/W
Symbol
Conditions
R
25
B25/85
Module
T = 25°C
Characteristic Values
min. typ. max.
4.45 4.7 5.0 k
3510
K
Symbol
TVJ
TVJM
Tstg
VISOL
M
d
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M4)
Maximum Ratings
-40...+125
-40...+150
-40...+125
°C
°C
°C
2500
V~
2.0 - 2.2
Nm
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.1 V; R0 = 21.5 m
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.20 V; R0 = 19 m
Thermal Response
IGBT (typ.)
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Free Wheeling Diode (typ.)
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface
Strike distance in air
Characteristic Values
min. typ. max.
12.7 mm
12.7 mm
40 g
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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