IGBT Module. MII100-12A3 Datasheet

MII100-12A3 Module. Datasheet pdf. Equivalent


Part MII100-12A3
Description IGBT Module
Feature IGBT (NPT) Module Phase leg Part number MII100-12A3 MII100-12A3 VCES = 2x 1200 V I C25 = 135 A .
Manufacture IXYS
Datasheet
Download MII100-12A3 Datasheet


IGBT (NPT) Module Phase leg Part number MII100-12A3 MII100- MII100-12A3 Datasheet
Recommendation Recommendation Datasheet MII100-12A3 Datasheet




MII100-12A3
IGBT (NPT) Module
Phase leg
Part number
MII100-12A3
MII100-12A3
VCES = 2x 1200 V
I C25 =
135 A
V =CE(sat)
2.2 V
7
6
4
5
Features / Advantages:
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
Backside: isolated
1
3
2
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: Y4
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a



MII100-12A3
MII100-12A3
IGBT
Symbol
VCES
VGES
VGEM
I C25
I C80
Ptot
VCE(sat)
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
IC = 75A; VGE = 15 V
IC = 3mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC =
inductive load
VCE = 600 V; IC = 75 A
VGE = ±15 V; RG= 15
VGE = ±15 V; RG= 15
VCEmax = 1200 V
VCEmax = 1200 V
VCE = 1200 V; VGE = ±15 V
RG= 15 ; non-repetitive
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
75 A
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
Ratings
min. typ. max. Unit
1200 V
±20 V
±30 V
135 A
90 A
560 W
2.2 2.7 V
2.7 V
4.5 5.5 6.5 V
5 mA
7.5 mA
300 nA
350 nC
100 ns
50 ns
650 ns
50 ns
12.1 mJ
10.5 mJ
150 A
10 µs
270 A
0.22 K/W
0.22 K/W
Diode
VRRM
I F25
IF 80
VF
max. repetitive reverse voltage
forward current
forward voltage
IR reverse current
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF = 75A
VR = VRRM
VR = 600 V
-diF /dt = 600 A/µs
IF = 75A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1200 V
150 A
95 A
2.50 V
1.70 V
1 mA
1.5 mA
7 µC
62 A
200 ns
1.2 mJ
0.45 K/W
0.45 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)