Power MOSFET. ECH8419 Datasheet

ECH8419 MOSFET. Datasheet pdf. Equivalent


Part ECH8419
Description N-Channel Power MOSFET
Feature Ordering number : ENA1886A ECH8419 N-Channel Power MOSFET 35V, 9A, 17mΩ, Single ECH8 http://onsemi.
Manufacture ON Semiconductor
Datasheet
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Ordering number : ENA1886A ECH8419 N-Channel Power MOSFET 3 ECH8419 Datasheet
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ECH8419
Ordering number : ENA1886A
ECH8419
N-Channel Power MOSFET
35V, 9A, 17mΩ, Single ECH8
http://onsemi.com
Features
ON-resistance RDS(on)1=13mΩ (typ.)
4V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
35
±20
9
40
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8419-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
KZ
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/20211PE TKIM TC-00002564 No. A1886-1/7



ECH8419
ECH8419
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=2.5A, VGS=4.5V
ID=2.5A, VGS=4V
VDS=20V, f=1MHz
See specied Test Circuit.
VDS=20V, VGS=10V, ID=9A
IS=9A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=20V
ID=5A
RL=4Ω
D VOUT
ECH8419
P.G 50Ω S
min
35
Ratings
typ
1.2
4.3
13
21
27
960
130
80
13
26
66
31
19
3.9
3.8
0.85
max
1
±10
2.6
17
30
38
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8419-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1886-2/7







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