Power MOSFET. SFT1350 Datasheet

SFT1350 MOSFET. Datasheet pdf. Equivalent


Part SFT1350
Description P-Channel Power MOSFET
Feature Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET –40V, –19A, 59mΩ, Single TP/TP-FA http:/.
Manufacture ON Semiconductor
Datasheet
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Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET – SFT1350 Datasheet
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SFT1350
Ordering number : ENA1874A
SFT1350
P-Channel Power MOSFET
–40V, –19A, 59mΩ, Single TP/TP-FA
http://onsemi.com
Features
ON-resistance RDS(on)1=45mΩ(typ.) Input Capacitance Ciss=590pF(typ.)
Halogen free compliance
Protection diode in
4.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--40
±20
--19
--76
1.0
23
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ)
7518-004
Package Dimensions unit : mm (typ)
7003-004
6.5 2.3
5.0 0.5 SFT1350-H 6.5 2.3 SFT1350-TL-H
5.0 0.5
4
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
T1350
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2, 4
1
TL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/D1510PA TKIM TC-00002500 No. A1874-1/9



SFT1350
SFT1350
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--9.5A
ID=--9.5A, VGS=--10V
ID=--5A, VGS=--4.5V
VDS=--20V, f=1MHz
See specied Test Circuit.
VDS=--20V, VGS=--10V, ID=--19A
IS=--19A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --20V
ID= --9.5A
RL=2.1Ω
D VOUT
SFT1350
P.G 50Ω S
min
--40
Ratings
typ
--1.7
8.7
45
73
590
85
61
8
40
52
44
12
3.6
2.0
--1.03
max
--1
±10
--2.6
59
105
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
SFT1350-H
SFT1350-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and Halogen Free
No. A1874-2/9







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