Power MOSFET. NTJD1155L Datasheet

NTJD1155L MOSFET. Datasheet pdf. Equivalent


Part NTJD1155L
Description Power MOSFET
Feature NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJ.
Manufacture ON Semiconductor
Datasheet
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NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch w NTJD1155L Datasheet
Recommendation Recommendation Datasheet NTJD1155L Datasheet




NTJD1155L
NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
LevelShift, PChannel SC88
The NTJD1155L integrates a P and NChannel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The PChannel device is specifically
designed as a load switch using ON Semiconductor stateoftheart
trench technology. The NChannel, with an external resistor (R1),
functions as a levelshift to drive the PChannel. The NChannel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
VIN and VON/OFF.
Features
Extremely Low RDS(on) PChannel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Input Voltage (VDSS, PCh)
ON/OFF Voltage (VGS, NCh)
Continuous Load Current
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Pulsed Load Current
tp = 10 ms
Operating Junction and Storage Temperature
VIN
VON/OFF
IL
PD
ILM
TTSJT,G
8.0
8.0
±1.3
±0.9
0.40
0.20
±3.9
55 to
150
V
V
A
W
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 0.4 A
TL 260 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
320 °C/W
JunctiontoFoot – Steady State (Note 1)
RqJF
220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 5
1
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V(BR)DSS
8.0 V
RDS(on) TYP
130 mW @ 4.5 V
170 mW @ 2.5 V
260 mW @ 1.8 V
ID MAX
±1.3 A
SIMPLIFIED SCHEMATIC
4 2,3
Q2
6
5 Q1
1
MARKING
SC88
DIAGRAM
(SOT363)
1 CASE 419B
STYLE 30
TB M G
TB = Device Code
G
M = Date Code
1
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
D1/G2 G1 S2
654
1 23
S1 D2 D2
ORDERING INFORMATION
Device
Package
Shipping
NTJD1155LT1G
SC88 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD1155L/D



NTJD1155L
NTJD1155L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
OFF CHARACTERISTICS
Q2 DraintoSource Breakdown Voltage
Forward Leakage Current
Q1 GatetoSource Leakage Current
Q1 Diode Forward OnVoltage
ON CHARACTERISTICS
VIN
IFL
IGSS
VSD
VGS2 = 0 V, ID2 = 250 mA
VGS1 = 0 V,
VDS2 = 8.0 V
TJ = 25°C
TJ = 125°C
VDS1 = 0 V, VGS1 = ±8.0 V
IS = 0.4 A, VGS1 = 0 V
ON/OFF Voltage
Q1 Gate Threshold Voltage
Input Voltage
Q2 DraintoSource On Resistance
VON/OFF
VGS1(th)
VIN
RDS(on)
VGS1 = VDS1, ID = 250 mA
VGS1 = VDS1, ID = 250 mA
VON/OFF = 1.5 V
VILIN==14.2.5AV
VIN = 2.5 V
IL = 1.0 A
VIN = 1.8 V
IL = 0.7 A
Load Current
IL VDROP 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V
VDROP 0.3 V, VIN = 2.5 V,
VON/OFF = 1.5 V
Min
8.0
1.5
0.4
1.8
1.0
1.0
Typ
0.8
130
170
260
Max
1.0
10
±100
1.1
8.0
1.0
8.0
175
220
320
Unit
V
mA
nA
V
V
V
V
mW
A
VIN
R1
4
6
Q2
2,3
C1
6
VOUT
ON/OFF
CI
R2
5
Q1
1
R2
CO
Figure 1. Load Switch Application
LOAD
GND
Components
Description
R1 Pullup Resistor
R2 Optional SlewRate Control
CO, CI
C1
Output Capacitance
Optional InRush Current Control
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turnon.
Values
Typical 10 kW to 1.0 MW*
Typical 0 to 100 kW*
Usually < 1.0 mF
Typical 1000 pF
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