P-CHANNEL MOSFET. STS3DPF60L Datasheet

STS3DPF60L MOSFET. Datasheet pdf. Equivalent


Part STS3DPF60L
Description DUAL P-CHANNEL MOSFET
Feature STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET™ MOSFET Table 1: General Features Figure.
Manufacture STMicroelectronics
Datasheet
Download STS3DPF60L Datasheet


STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET™ M STS3DPF60L Datasheet
Recommendation Recommendation Datasheet STS3DPF60L Datasheet




STS3DPF60L
STS3DPF60L
DUAL P-CHANNEL 60V - 0.10 - 3A SO-8
STripFET™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS
RDS(on)
ID
STS3DPF60L
60 V
< 0.12
3A
s TYPICAL RDS(on) = 0.10 @ 10V
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT
ASSEMBLYY
s LOW THRESHOLD DRIVE
)DESCRIPTION
t(sThis MOSFET is the latest development of STMi-
ccroelectronis unique "Single Feature Size™" strip-
ubased process. The resulting transistor shows ex-
dtremely high packing density for low on-resistance,
rorugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
Pturing reproducibility.
SO-8
Figure 2: Internal Schematic Diagram
oleteAPPLICATIONS
ss DC-DC CONVERTERS
lete Product(s) - ObTable 2: Order Codes
soPART NUMBER
Ob STS3DPF60L
MARKING
S3DPF60L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
September 2004
Rev. 1
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STS3DPF60L
STS3DPF60L
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
60
60
± 16
3
1.9
12
2
-55 to 150
Unit
V
V
V
A
A
A
W
°C
Table 4: Thermal Data
Rthj-amb (*)Thermal Resistance Junction-ambient
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu t 10 s
62.5
t(s)ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
cTable 5: On/Off
uSymbol
Parameter
Test Conditions
Min. Typ. Max.
rodV(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
te PIDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating ,TC= 125°C
1
10
oleIGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
bsVGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.5
Obsolete Product(s) - ORDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 1.5 A
VGS = 4.5 V, ID = 1.5 A
0.10 0.12
0.130 0.160
°C/W
Unit
V
µA
µA
nA
V
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