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Power MOSFET. IRFP4004PbF Datasheet

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Power MOSFET. IRFP4004PbF Datasheet






IRFP4004PbF MOSFET. Datasheet pdf. Equivalent




IRFP4004PbF MOSFET. Datasheet pdf. Equivalent





Part

IRFP4004PbF

Description

Power MOSFET

Manufacture

International Rectifier

Datasheet
Download IRFP4004PbF Datasheet


International Rectifier IRFP4004PbF

IRFP4004PbF; PD - 97323 Applications l High Efficien cy Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Spe ed Power Switching l Hard Switched and High Frequency Circuits Benefits l Impr oved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capaci tance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G I RFP4004PbF HEXFET.


International Rectifier IRFP4004PbF

® Power MOSFET D VDSS RDS(on) typ. max . ID (Silicon Limited) S ID (Package Li mited) 40V 1.35mΩ 1.70mΩ 350Ac 195 A D S D G TO-247AC G Gate D Drain S Source Absolute Maximum Ratings Symb ol Parameter ID @ TC = 25°C Continuo us Drain Current, VGS @ 10V (Silicon Li mited) ID @ TC = 100°C ID @ TC = 25° C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon.


International Rectifier IRFP4004PbF

Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current d Maximum Power Dissipation Li near Derating Factor VGS Gate-to-Sourc e Voltage dv/dt TJ TSTG Peak Diode Re covery f Operating Junction and Storage Temperature Range Soldering Temperatu re, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Aval anche Characterist.



Part

IRFP4004PbF

Description

Power MOSFET

Manufacture

International Rectifier

Datasheet
Download IRFP4004PbF Datasheet




 IRFP4004PbF
PD - 97323
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
IRFP4004PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
40V
1.35m
1.70m
350Ac
195A
D
S
D
G
TO-247AC
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case k
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
Max.
350c
250c
195
1390
380
2.5
± 20
2.0
-55 to + 175
300
10lbxin (1.1Nxm)
290
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.40
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
06/05/08





 IRFP4004PbF
IRFP4004PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.035 ––– V/°C Reference to 25°C, ID = 5mAd
––– 1.35 1.70 mVGS = 10V, ID = 195A g
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
290 ––– –––
––– 220 330
––– 59 –––
––– 75 –––
––– 145 –––
S VDS = 10V, ID = 195A
nC ID = 195A
VDS = 20V
VGS = 10V g
ID = 195A, VDS =0V, VGS = 10V
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Internal Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)i –––
Effective Output Capacitance (Time Related)h –––
6.8
59
370
160
190
8920
2360
930
2860
3110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns VDD = 20V
ID = 195A
RG = 2.7
VGS = 10V g
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V i
VGS = 0V, VDS = 0V to 32V h
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) di
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 350c A MOSFET symbol
D
showing the
––– ––– 1390
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 195A, VGS = 0V g
––– 83 130 ns TJ = 25°C
VR = 20V,
––– 78 120
TJ = 125°C
––– 190 290 nC TJ = 25°C
IF = 195A
di/dt = 100A/µs g
––– 210 320
TJ = 125°C
––– 4.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 195A, di/dt 690A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 195A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140).
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.015mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com





 IRFP4004PbF
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 25°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
IRFP4004PbF
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
1.5
TJ = 25°C
10
VDS = 10V
60µs PULSE WIDTH
1.0
345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10.0
ID= 195A
8.0
VDS= 32V
VDS= 24V
6.0
4.0
2.0
0.0
0
50 100 150 200 250
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3



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