N-Channel MOSFET. HY1707P Datasheet

HY1707P MOSFET. Datasheet pdf. Equivalent


Part HY1707P
Description N-Channel MOSFET
Feature HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.
Manufacture HOOYI
Datasheet
Download HY1707P Datasheet


HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • HY1707P Datasheet
HY1707P/M/B/I/MF/PS/PM Features • 70V/80A, RDS(ON)= 6mΩ (ty HY1707PM Datasheet
HY1707P/M/B/I/MF/PS/PM Features • 70V/80A, RDS(ON)= 6mΩ (ty HY1707PS Datasheet
Recommendation Recommendation Datasheet HY1707P Datasheet




HY1707P
HY1707P
Features
70V/80A,
RDS(ON)= 6m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
G
D
S
D
Applications
Power Management for Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1707
Yÿ YWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY1707P
HY1707P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Drain-Source Avalanche Energy
Note *Pulse width limited by safe operating area.
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.3mH
Rating
70
±25
175
-55 to 175
80
320*
80
65
180
75
1.2
62.5
650
Unit
V
°C
°C
A
A
A
W
°C/W
°C/W
mJ
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
HY1707P
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
70 74 - V
VDS=70V, VGS=0V
TJ=85°C
-
-
-1
µA
- 10
VDS=VGS, IDS=250µA
2 3 4V
VGS=±25V, VDS=0V
- - ±100 nA
VGS=10V, IDS=40A
- 6 7 m
ISD=40A, VGS=0V
- 0.8 1 V
- 55 - ns
IDS=40A, dlSD/dt=100A/µs
-
100
-
nC
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