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Pch MOSFET. EM6J1 Datasheet

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Pch MOSFET. EM6J1 Datasheet






EM6J1 MOSFET. Datasheet pdf. Equivalent




EM6J1 MOSFET. Datasheet pdf. Equivalent





Part

EM6J1

Description

1.2V Drive Pch MOSFET

Manufacture

Rohm

Datasheet
Download EM6J1 Datasheet


Rohm EM6J1

EM6J1; 1.2V Drive Pch MOSFET EM6J1 zStructure Silicon P-channel MOSFET zFeatures 1) T wo Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low v oltage drive (1.2V drive). 4) Built-in G-S Protection Diode. zApplications Swi tching zDimensions (Unit : mm) EMT6 SO T-563 Abbreviated symbol : J01 Each lea d has same dimensions zPackaging speci fications Type EM.


Rohm EM6J1

6J1 Package Code Basic ordering unit (p ieces) Taping T2R 8000 zInner circuit (6) (5) (4) ∗1 ∗2 ∗2 ∗1 ( 1) (2) ∗1 ESD PROTECTION DIODE ∗2 B ODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) T r2 Gate (6) Tr1 Drain zAbsolute maximu m ratings (Ta=25°C) Parameter Symbol Drain-source voltage .


Rohm EM6J1

Gate-source voltage Drain current Cont inuous Pulsed Source current (Body Dio de) Continuous Pulsed Total power dis sipation VDSS VGSS ID IDP∗1 IS ISP 1 PD∗2 Channel temperature Tch Ra nge of storage temperature Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 Each termi nal mounted on a recommended land Limi ts −20 ±10 ±200 ±800 −100 −800 150 120 150 −55 to +150 Unit V V mA .



Part

EM6J1

Description

1.2V Drive Pch MOSFET

Manufacture

Rohm

Datasheet
Download EM6J1 Datasheet




 EM6J1
1.2V Drive Pch MOSFET
EM6J1
zStructure
Silicon P-channel MOSFET
zFeatures
1) Two Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Ultra low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
zDimensions (Unit : mm)
EMT6
SOT-563
Abbreviated symbol : J01
Each lead has same dimensions
zPackaging specifications
Type
EM6J1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zInner circuit
(6) (5)
(4)
1
2 2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Total power dissipation
VDSS
VGSS
ID
IDP1
IS
ISP1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw 10µs, Duty cycle 1%
2 Each terminal mounted on a recommended land
Limits
20
±10
±200
±800
100
800
150
120
150
55 to +150
Unit
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each therminal mounted on a recommended land
Symbol
Rth (ch-a)
Limits
833
1042
Unit
°C / W / TOTAL
°C / W / ELEMENT
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c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.05 - Rev.A





 EM6J1
EM6J1
zElectrical characteristics (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS=20V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS=10V, ID=100µA
0.8 1.2 ID=200mA, VGS=4.5V
Static drain-source on-state
resistance
RDS
(on)
1.0 1.5
1.3 2.2
1.6 3.5
ID=100mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
Forward transfer admittance
2.4 9.6
Yfs 0.2
ID=10mA, VGS=1.2V
S VDS=10V, ID=200mA
Input capacitance
Ciss
115
pF VDS=10V
Output capacitance
Coss 10 pF VGS=0V
Reverse transfer capacitance Crss 6 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on)
6
ns VDD 10V
tr 4 ns ID=100mA
td (off)
17
VGS=4.5V
ns RL 100
tf 17 ns RG=10
Total gate charge
Qg 1.4 nC VDD 10V, ID=200mA
Gate-source charge
Qgs 0.3 nC VGS=4.5V
Gate-drain charge
Qgd 0.3 nC RL 50Ω, RG=10
Pulsed
zBody diode characteristics (Source-drain)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= −200mA, VGS=0V
Data Sheet
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.05 - Rev.A





 EM6J1
EM6J1
zElectrical characteristics curves
Data Sheet
0.2
0.15
0.1
0.05
0
0
VGS= -10.0V
VGS= -4.5V
VGS= -3.2V
Ta=25°C
Pulsed
VGS= -1.5V
VGS= -2.5V
VGS= -2.0V
VGS= -1.8V
VGS= -1.2V
VGS= -1.0V
0.2 0.4 0.6 0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics()
0.2
VGS= -4.5V
Ta=25°C
Pulsed
0.15 VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
0.1 VGS= -1.2V
0.05
VGS= -1.0V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.2 Typical output characteristics()
1 VDS= -10V
Pulsed
0.1
Ta= 125°C
0.01 Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
0.0001
0 0.5 1 1.5
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
10000 Ta=25°C
Pulsed
1000
100
0.001
0.01
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
10000 VGS= -2.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -1.8V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
10000
VGS= -1.5V
Pulsed
10000
VGS= -1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current()
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
DRAIN-CURRENT : -ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current()
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.05 - Rev.A



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