Pch MOSFET. RZL025P01 Datasheet

RZL025P01 MOSFET. Datasheet pdf. Equivalent


Part RZL025P01
Description 1.5V Drive Pch MOSFET
Feature Transistors 1.5V Drive Pch MOSFET RZL025P01 RZL025P01 0.2Max. zStructure Silicon P-channel MOSFET.
Manufacture Rohm
Datasheet
Download RZL025P01 Datasheet


Transistors 1.5V Drive Pch MOSFET RZL025P01 RZL025P01 0.2M RZL025P01 Datasheet
Recommendation Recommendation Datasheet RZL025P01 Datasheet




RZL025P01
Transistors
1.5V Drive Pch MOSFET
RZL025P01
RZL025P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YC
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL025P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
12
±10
±2.5
±10
0.8
10
1.0
150
55 to +150
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board.
Symbol
Rth (ch-a)
Limits
125
Unit
°C / W
(4)
1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
1/5



RZL025P01
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= 6V, ID= 1mA
44 61 mID= 2.5A, VGS= 4.5V
Static drain-source on-state
resistance
RDS (on)
60 84 mID= 1.2A, VGS= 2.5V
81 121 mID= 1.2A, VGS= 1.8V
Forward transfer admittance
110 220 mID= 0.5A, VGS= 1.5V
Yfs 3.5
S VDS= 6V, ID= 2.5A
Input capacitance
Ciss
1350
pF VDS= 6V
Output capacitance
Coss
130
pF VGS=0V
Reverse transfer capacitance Crss
125
Turn-on delay time
td (on) 9
Rise time
tr 35
Turn-off delay time
td (off)
130
Fall time
tf 85
Total gate charge
Qg 13
Gate-source charge
Qgs 2.5
Gate-drain charge
Qgd 2.0
pF f=1MHz
ns ID= 1.2A
ns VDD 6V
VGS= 4.5V
ns RL 5
ns RG=10
nC VDD 6V, ID= 2.5A
nC VGS= 4.5V
nC RL 2.4, RG=10
Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= 2.5A, VGS=0V
RZL025P01
2/5







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)