Power MOSFET. US6J11 Datasheet

US6J11 MOSFET. Datasheet pdf. Equivalent


Part US6J11
Description Power MOSFET
Feature US6J11   Pch+Pch -12V -1.3A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD -12V 260mΩ ±1.3A 1.0W lF.
Manufacture Rohm
Datasheet
Download US6J11 Datasheet


US6J11   Pch+Pch -12V -1.3A Small Signal MOSFET VDSS RDS(on US6J11 Datasheet
Recommendation Recommendation Datasheet US6J11 Datasheet




US6J11
US6J11
  Pch+Pch -12V -1.3A Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-12V
260mΩ
±1.3A
1.0W
lFeatures
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
lOutline
SOT-363T
TUMT6
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
J11
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
VDSS
ID
IDP*1
VGSS
-12 V
±1.3 A
±5.2 A
±10 V
Power dissipation
total
element
PD*2
1.0
0.7 W
total PD*3 0.91
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160630 - Rev.001    



US6J11
US6J11
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
element
total
                Datasheet
                       
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 179
- - 137
Unit
/W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = -1mA
ΔV(BR)DSS ID = -1mA
  ΔTj  referenced to 25
IDSS VDS = -12V, VGS = 0V
IGSS VDS = 0V, VGS = ±10V
VGS(th) VDS = -6V, ID = -1mA
ΔVGS(th) ID = -1mA
  ΔTj  referenced to 25
VGS = -4.5V, ID = -1.3A
VGS = -2.5V, ID = -0.6A
RDS(on)*4 VGS = -1.8V, ID = -0.6A
VGS = -1.5V, ID = -0.2A
VGS = -4.5V, ID = -1.3A
Tj = 125
RG f = 1MHz, open drain
|Yfs|*4 VDS = -6V, ID = -1.3A
Values
Min. Typ. Max.
   
Unit
-12 - - V
- -21.9 - mV/
- - -1 μA
- - ±10 μA
-0.3 - -1.0 V
- 2.4 - mV/
- 190 260
- 280 390
- 400 600
- 530 1060
- 280 400
- 28 - Ω
1.4 2.8 -
S
                                                                                               
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© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160630 - Rev.001







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