Pch MOSFET. RZR025P01 Datasheet

RZR025P01 MOSFET. Datasheet pdf. Equivalent


Part RZR025P01
Description 1.5V Drive Pch MOSFET
Feature Transistors 1.5V Drive Pch MOSFET RZR025P01 RZR025P01 zFeatures 1) Low On-resistance. 2) Built-in .
Manufacture Rohm
Datasheet
Download RZR025P01 Datasheet


Transistors 1.5V Drive Pch MOSFET RZR025P01 RZR025P01 zFea RZR025P01 Datasheet
Recommendation Recommendation Datasheet RZR025P01 Datasheet




RZR025P01
RZR025P01
  ch -12V -2.5A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-12V
61mΩ
±2.5A
1.0W
lFeatures
1) Low on-resistance
2) Built-in G-S Protection Diode
3) Small and surface mount package(TSMT3)
4) Low voltage drive(1.5V)
lOutline
SOT-346T
SC-96
TSMT3
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
YC
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-12 V
Continuous drain current
ID ±2.5 A
Pulsed drain current
IDP*1 ±10 A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.0 W
PD*3 0.76 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150918 - Rev.001    



RZR025P01
RZR025P01
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 125
- - 165
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
IDSS VDS = -12V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -6V, ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
VGS = -4.5V, ID = -2.5A
Static drain - source
on - state resistance
RDS(on)*4 VGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1.2A
VGS = -1.5V, ID = -0.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -6V, ID = -2.5A
Values
Unit
Min. Typ. Max.
-12 - - V
- -21.9 - mV/
- - -1 μA
- - ±10 μA
-0.3 - -1.0 V
- 2.4 - mV/
- 44 61
- 60 84
- 81 121
- 110 220
- 13.5 -
Ω
3.5 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150918 - Rev.001







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