Power MOSFET. QS6J11 Datasheet

QS6J11 MOSFET. Datasheet pdf. Equivalent


Part QS6J11
Description Dual Pch -12V -2.0A Power MOSFET
Feature QS6J11 Dual Pch -12V -2.0A Power MOSFET VDSS RDS(on) (Max.) ID PD -12V 105mW -2A 1.25W lFeatures .
Manufacture Rohm
Datasheet
Download QS6J11 Datasheet


QS6J11 Dual Pch -12V -2.0A Power MOSFET VDSS RDS(on) (Max.) QS6J11 Datasheet
Recommendation Recommendation Datasheet QS6J11 Datasheet




QS6J11
QS6J11
Dual Pch -12V -2.0A Power MOSFET
VDSS
RDS(on) (Max.)
ID
PD
-12V
105mW
-2A
1.25W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
Datasheet
lPackaging specifications
Packaging
lApplication
DC/DC converters
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
-12
2
8
10
1.25
0.6
150
-55 to +150
Taping
180
8
3,000
TR
J11
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.06 - Rev.B



QS6J11
QS6J11
Data Sheet
lThermal resistance
Parameter
Symbol
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient
lElectrical characteristics (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
RthJA *3
RthJA *4
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Values
Min. Typ. Max.
Unit
- - 100 °C/W
- - 208 °C/W
Values
Min. Typ. Max.
Unit
-12 - - V
Breakdown voltage
temperature coefficient
ΔV(BR)DSS ID = -1mA
ΔTj referenced to 25°C
- -17 - mV/°C
Zero gate voltage drain current
IDSS VDS = -12V, VGS = 0V
-
- -1 mA
Gate - Source leakage current
IGSS VGS = 10V, VDS = 0V
-
- 10 mA
Gate threshold voltage
VGS (th) VDS = -6V, ID = -1mA -0.3 - -1.0 V
Gate threshold voltage
temperature coefficient
ΔV(GS)th ID = -1mA
ΔTj referenced to 25C
- 2.4 - mV/°C
Static drain - source
on - state resistance
Gate input resistannce
Transconductance
VGS= -4.5V, ID= -2A, Tj=25°C
VGS= -2.5V, ID= -1A, Tj=25°C
RDS(on) *5 VGS= -1.8V, ID= -1A, Tj=25°C
VGS= -4.5V, ID= -2A, Tj=25°C
RG
gfs *5
VGS= -10V, ID= -9A, Tj=125°C
f = 1MHz, open drain
VDS = -6V, ID = -2A
-
-
-
-
-
-
2.0
75
105
150
200
120
3
4.8
105
145
225
400
170
-
-
mW
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.06 - Rev.B







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)