Power MOSFET. STD15N65M5 Datasheet

STD15N65M5 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STD15N65M5
STB15N65M5, STD15N65M5
Datasheet
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ M5 Power MOSFETs
in D2PAK and DPAK packages
TAB TAB
2
1
D2PAK
3
23
1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Product status
STB15N65M5
STD15N65M5
Features
Order code
VDS @
TJmax
RDS(on) max.
STB15N65M5
STD15N65M5
710 V
0.34 Ω
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
ID
11 A
Applications
• Switching applications
Description
These devices are N-channel Power MOSFET based on the MDmesh™ M5
innovative vertical process technology combined with the well-known PowerMESH™
horizontal layout. The resulting products offer extremely low on-resistance, making
them particularly suitable for applications requiring high power and superior
efficiency.
DS9045 - Rev 2 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STD15N65M5 Datasheet
Recommendation STD15N65M5 Datasheet
Part STD15N65M5
Description N-channel Power MOSFET
Feature STD15N65M5; STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK .
Manufacture STMicroelectronics
Datasheet
Download STD15N65M5 Datasheet




STMicroelectronics STD15N65M5
STB15N65M5, STD15N65M5
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
Value
±25
11
6.9
44
85
15
-55 to 150
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
D2PAK
DPAK
1.47
30 50
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
160
Unit
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DS9045 - Rev 2
page 2/24



STMicroelectronics STD15N65M5
STB15N65M5, STD15N65M5
Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown voltage
IDSS Zero gate voltage drain current
IGSS
Gate body leakage current
VGS(th)
Gate threshold voltage
RDS(on)
Static drain-source on resistance
1. Defined by design, not subject to production test.
Test conditions
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 650 V
VGS = 0 V, VDS = 650 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
650 V
1 µA
100 µA
±100 nA
345V
0.308 0.34 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
816
- 23 -
2.6
pF
Co(tr) (1)
Co(er) (2)
Equivalent capacitance time related
Equivalent capacitance
energy related
VDS = 0 to 520 V, VGS = 0 V
- 70 -
pF
21 -
Rg Gate input resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, ID=0 A
VDD = 520 V, ID = 5.5 A,
VGS = 0 to 10 V
(see Figure 17. Test circuit for
gate charge behavior)
- 5 -Ω
22 -
- 5.5
nC
-
11
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Symbol
td(v)
tr(v)
tc(off)
tf(i)
Parameter
Voltage delay time
Voltage rise time
Crossing time
Current fall time
Table 6. Switching times
Test conditions
Min.
VDD = 400 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18. Test circuit for
inductive load switching and
diode recovery times and Figure
21. Switching time waveform)
-
Typ.
30
8
12.5
11
Max.
-
Unit
ns
DS9045 - Rev 2
page 3/24





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