Power MOSFET. STD9NM40N Datasheet

STD9NM40N MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STD9NM40N
STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET
in DPAK and TO-220 packages
Datasheet — production data
Features
Order codes
STD9NM40N
STP9NM40N
VDSS@TJMAX RDS(on)max. ID
450 V
< 0.79 Ω 5.6 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TAB
3
1
DPAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STD9NM40N
STP9NM40N
Marking
9NM40N
Packages
DPAK
TO-220
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 023762 Rev 2
1/18
www.st.com
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STD9NM40N Datasheet
Recommendation STD9NM40N Datasheet
Part STD9NM40N
Description N-channel Power MOSFET
Feature STD9NM40N; STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220.
Manufacture STMicroelectronics
Datasheet
Download STD9NM40N Datasheet




STMicroelectronics STD9NM40N
Contents
Contents
STD9NM40N, STP9NM40N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 Doc ID 023762 Rev 2



STMicroelectronics STD9NM40N
STD9NM40N, STP9NM40N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
PTOT
dv/dt (2)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 5.6 A, di/dt 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS
Value
400
± 25
5.6
4.3
22.4
60
40
- 55 to 150
150
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Value
DPAK
TO-220
2.08
50
Unit
V
V
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25°C, ID = IAR, VDD = 50 V)
Value
2
140
Unit
A
mJ
Doc ID 023762 Rev 2
3/18







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