Power MOSFET. STU80N4F6 Datasheet

STU80N4F6 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STU80N4F6
STU80N4F6
N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™
Power MOSFET in a IPAK package
Datasheet production data
Features
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
' Ć7$%
* 
Order code
STU80N4F6
VDS
40 V
RDS(on) max ID
6.3 mΩ 80 A
Low gate charge
Very low on-resistance
High avalanche ruggedness
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
6 
$0Y
Order code
STU80N4F6
Table 1. Device summary
Marking
Package
80N4F6
IPAK
Packaging
Tube
February 2014
This is information on a product in full production.
DocID023839 Rev 4
1/13
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STU80N4F6 Datasheet
Recommendation STU80N4F6 Datasheet
Part STU80N4F6
Description N-channel Power MOSFET
Feature STU80N4F6; STU80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a IPAK package D.
Manufacture STMicroelectronics
Datasheet
Download STU80N4F6 Datasheet




STMicroelectronics STU80N4F6
Contents
Contents
STU80N4F6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STMicroelectronics STU80N4F6
STU80N4F6
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS
VGS
(1)
ID
(1)
ID
(2)
IDM
PTOT
IAV
EAS
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAV, VDD = 25 V)
Derating factor
Tstg Storage temperature
Tj Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
40
± 20
80
56
320
70
40
149
0.47
-55 to 175
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Value
2.14
100
Unit
V
V
A
A
A
W
A
mJ
W/°C
°C
°C
Unit
°C/W
°C/W
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