APM2313
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-1.8A
,
RDS(ON)=108mΩ(typ.)
@
V =-4.5V GS
RDS(ON)=135mΩ(typ.)
@
V =-2.5V GS
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SOT-23 Package
Applications
D
GS
Top View of SOT-23
S
Power Management in Notebook Computer ,
Portable Equipm...
