N-channel MOSFET. STW6N120K3 Datasheet

STW6N120K3 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics STW6N120K3
STFW6N120K3, STP6N120K3,
STW6N120K3
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
Ptot
STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W
STP6N120K3 1200 V < 2.4 Ω 6 A 150 W
STW6N120K3 1200 V < 2.4 Ω 6 A 150 W
100% avalanche tested
Extremely large avalanche performance
Gate charge minimized
Very low intrinsic capacitances
Zener-protected
Applications
Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
3
2
1
TO-3PF
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STFW6N120K3
STP6N120K3
STW6N120K3
Marking
6N120K3
Package
TO-3PF
TO-220
TO-247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 15572 Rev 3
1/17
www.st.com
17


STW6N120K3 Datasheet
Recommendation STW6N120K3 Datasheet
Part STW6N120K3
Description N-channel MOSFET
Feature STW6N120K3; STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in T.
Manufacture STMicroelectronics
Datasheet
Download STW6N120K3 Datasheet




STMicroelectronics STW6N120K3
Contents
Contents
STFW6N120K3, STP6N120K3, STW6N120K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 15572 Rev 3



STMicroelectronics STW6N120K3
STFW6N120K3, STP6N120K3, STW6N120K3
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-3PF TO-220 TO-247
VGS
ID
ID
IDM (1)
PTOT
IAR
EAS
ESD
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Power dissipation at TC = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
Single pulse avalanche energy (starting
TJ = 25 °C, ID = IAR, VDD = 50 V)
Gate-source human body model
(C = 100 pF, R = 1.5 kΩ)
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink
(t = 1 s, TC = 25 °C)
Tstg Storage temperature
TJ Operating junction temperature
1. Pulse width limited by safe operating area
± 30
6
3.8
20
63 150
7
180
6
3500
-55 to 150
150
V
A
A
A
W
A
mJ
kV
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
TJ
Thermal resistance junction-case
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-3PF TO-220 TO-247
Unit
1.98 0.83 °C/W
50 62.5 50 °C/W
300 °C
Doc ID 15572 Rev 3
3/17







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