Junction MOSFET. APT77N60SC6 Datasheet

APT77N60SC6 MOSFET. Datasheet pdf. Equivalent


Microsemi APT77N60SC6
APT77N60BC6
APT77N60SC6
600V 77A 0.041Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Popular TO-247 or Surface Mount D3 package.
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specied.
Symbol Parameter
APT77N60B_SC6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 2 ( Id =13.4A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V )
600
77
49
272
±20
481
- 55 to 150
300
13.4
2.96
1954
Volts
Amps
Volts
Watts
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 44.4A)
.037 .041
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 25°C)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TC = 150°C)
25
250
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA)
2.5 3 3.6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
Microsemi Website - http://www.microsemi.com


APT77N60SC6 Datasheet
Recommendation APT77N60SC6 Datasheet
Part APT77N60SC6
Description Super Junction MOSFET
Feature APT77N60SC6; APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultr.
Manufacture Microsemi
Datasheet
Download APT77N60SC6 Datasheet




Microsemi APT77N60SC6
DYNAMIC CHARACTERISTICS
APT77N60B_SC6
Symbol Characteristic
Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Qg Total Gate Charge 4
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
VGS = 10V
VDD = 400V
ID = 77A @ 25°C
td(on) Turn-on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
INDUCTIVE SWITCHING
VGS = 10V
VDD = 380V
ID = 77A @ 25°C
RG = 5.0Ω
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy 5
Eoff Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
MIN
TYP
13600
4400
290
260
38
144
18
27
110
8
1670
2880
2300
3100
MAX
165
12
UNIT
pF
nC
ns
μJ
Symbol Characteristic / Test Conditions
MIN TYP MAX
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 3 (VGS = 0V, IS = -77A)
/dv
dt
Peak
Diode
Recovery
/dv
dt
6
t rr
Reverse Recovery Time
(IS
=
-77A,
/di
dt
=
100A/μs)
Q rr
Reverse Recovery Charge
(IS
=
-77A,
/di
dt
=
100A/μs)
IRRM
Peak Recovery Current
(IS
=
-77A,
/di
dt
=
100A/μs)
Tj = 25°C
Tj = 25°C
Tj = 25°C
77
231
1 1.2
15
950
32
60
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN TYP MAX
RθJC Junction to Case
0.26
RθJA Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction temperature
4 See MIL-STD-750 Method 3471
2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery.
PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specications and information contained herein.
UNIT
Amps
Volts
V/ns
ns
μC
Amps
UNIT
°C/W
0.30
0.25
D = 0.9
0.20
0.7
0.15
0.10
0.05
0
10-5
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1 1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration



Microsemi APT77N60SC6
Typical Performance Curves
250
200 15V 10V
7.5V
150 7.0V
6.5V
100
6.0V
50 5.5V
5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
1.80
NORMALIZED TO
1.60
VGS = 10V @ 38.5A
1.40
1.20
1.00
VGS = 10V
VGS = 20V
0.80
0
1.20
40
80
120 160
200
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
1.15
1.10
1.05
1.00
0.95
0.90
-50
0 50 100 150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
1.20
1.10
1.00
0.90
0.80
0.70
0.60
- 50
0TC, Case T5e0mperature10(°0C)
150
FIGURE 8, Threshold Voltage vs Temperature
25
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
00
APT77N60B_SC6
75
50
25
0
0
80
TJ= 25°C
TJ= 125°C
TJ= -55°C
246
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.00
2.50
2.00
1.50
1.00
0.50
0
-50 0
50 100 150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
100
10
10ms
100µs
1ms
100ms
1
0.1
1
10 100 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area





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