N-Channel MOSFET. APT56F60L Datasheet

APT56F60L MOSFET. Datasheet pdf. Equivalent


Microsemi APT56F60L
APT56F60B2
APT56F60L
600V, 60A, 0.11Ω Max, trr 290ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Max®
TO-264
APT56F60B2 APT56F60L
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Ratings
60
38
210
±30
1580
28
Unit
A
V
mJ
A
Min Typ Max Unit
1040 W
0.12
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m


APT56F60L Datasheet
Recommendation APT56F60L Datasheet
Part APT56F60L
Description N-Channel MOSFET
Feature APT56F60L; APT56F60B2 APT56F60L 600V, 60A, 0.11Ω Max, trr ≤290ns N-Channel FREDFET Power MOS 8™ is a high spe.
Manufacture Microsemi
Datasheet
Download APT56F60L Datasheet




Microsemi APT56F60L
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 28A
VGS = VDS, ID = 2.5mA
600
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT56F60B2_L
Typ Max Unit
V
0.57 V/°C
0.09 0.11
Ω
45V
-10 mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 28A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 28A
RG = 2.2Ω 6 , VGG = 15V
Typ
55
11300
115
1040
550
285
280
60
120
65
75
190
60
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 28A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 28A 3
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 28A, di/dt 1000A/µs, VDD = 400V,
TJ = 125°C
Min
Typ Max Unit
60
A
210
1.0
255 290
450 540
1.41
3.66
10.7
15.8
V
ns
µC
A
20 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



Microsemi APT56F60L
250
VGS = 10V
200
150
100
TJ = -55°C
TJ = 25°C
50
TJ = 150°C
TJ = 125°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 28A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
100
TJ = -55°C
TJ = 25°C
80
TJ = 125°C
60
40
20
0
0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 28A
14
70
12
VDS = 120V
10
VDS = 300V
8
6
VDS = 480V
4
2
0
0 50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
90
TJ = 125°C
80
70
VGS= 7&8V
APT56F60B2_L
60
6V
50
40
30
5.5V
20
10 5V
4.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
200
180
160
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
TJ = -55°C
100
TJ = 25°C
80
TJ = 125°C
60
40
20
0
0
20,000
10,000
12345678
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1000
100
Coss
Crss
10
0 100 200 300 400 500 600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
200
180
160
140
120
TJ = 25°C
100
80
TJ = 150°C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage





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